1)electrode substrates衬底电极
1.The morphologies of CNT cathodes on different electrode substrates were observed by scanning electron mircroscope (SEM),and the field emission properties were characterized in the same condition of 1.通过丝网印刷技术,将碳纳米管(carbon nanotube,CNT)浆料直接转移到CrCuCr薄膜衬底电极、掺Sn的In2O3(indium tin oxides,ITO)透明导电薄膜衬底电极和Ag浆导电厚膜衬底电极上,高温烧结后得到CNT阴极,并对CNT阴极进行表面形貌和场发射性能的研究。
英文短句/例句
1.The effect of field emission properties of carbon nanotube cathodes on different substrates衬底电极对丝网印刷CNT阴极场发射性能的影响
2.Electrochemical behavior of boron-doped diamond thin-film electrodes grown on tantalumTa衬底B掺杂金刚石薄膜电极极化特性
3.Impact of Double-Hump Substrate Current on the Degradation of High Voltage MOS Transistor双极值衬底电流对高压MOS器件退化的影响
4.Research of Resonant Tunneling Diode on GaAs Substrate;GaAs衬底共振隧穿二极管的研究
5.This voltage creates a field across the gate oxide, which causes the adjacent P substrate to invert to N-type.这一电压在栅极氧化物层上产生一个电场，它导致毗邻的P型衬底转变成N型。
6.measuring methods of surface resistivity for glass substrates玻璃衬底表面电阻率试验方法
7.Study of Vertical-Structured GaN-Based LED by Electroplating Copper Layer;GaN基垂直结构LED电镀铜衬底的研究
8.Phase Diagrams and Dielectric Properties of Epitaxial BST Thin Films on Tetragonal Substrates四方衬底上BST薄膜的相图及介电特性
9.Electrochromic Properties of WO_x-Mo Thin Films on Polyethylene Terephthalates Soft Substrate柔性衬底WO_x-Mo薄膜电致变色性能研究
10.Room Temperature Electrodeposition of Highly Oriented CuBr on Indium Tin Oxide Glass Substrate在ITO导电衬底上室温电沉积高取向的CuBr薄膜
11.The Nitride Coatings on Aluminium Alloy Substrate by Arc Ion Plating;铝合金衬底电弧离子镀氮化物膜层的研究
12.Study on the Polycrystalline Silicon Thin Film Solar Cells on Ceramics;陶瓷衬底上多晶硅薄膜太阳电池的研究
13.Deposition and Properties of [(Pb,La)(Zr,Ti)O_3] Ferroelectric Thin Films on ITO-Coated Glass Substrate;ITO玻璃衬底上PLZT铁电薄膜的制备与性能研究
14.The Study of Thin Film Amorphous Silicon Solar Cells Material Deposited on Polymeric Substrate;柔性衬底上非晶硅薄膜太阳电池的材料研究
15.The Substrate Noise Coupling for Deep-submicron CMOS Mixed-Signal ICs;深亚微米CMOS混合信号电路衬底耦合噪声模型
16.A Study on the Characteristic of Electroluminescence for GaN Based Lateral Structure Blue Light Emitting Diodes on Si Substrate;Si衬底GaN基同侧结构蓝光LED电致发光特性研究
17.The Study of Stress Problem in the Process of IC Substrate;集成电路衬底制造过程中应力问题的研究
18.A Study of Removal Techniques of Contamination on Si Wafers in Microelectronics;微电子器件硅衬底表面污染物去除技术的研究
相关短句/例句
collector-substrate junction集电极-衬底结<冶>
3)collector substrate capacity集极衬底电容
4)patterned substrate electrode图形化的衬底电极
1.Improved field emission characteristics of carbon nanotubes by patterned substrate electrode;图形化的衬底电极改善碳纳米管的场发射特性
5)substrate resistance衬底电阻
1.An accurate method to extract substrate resistances of RF MOSFETs is proposed.通过对CMOS的PSP模型中四衬底电阻网络的等效电路进行Y参数分析,得到衬底电阻参数的完整提取方法。
6)substrate current衬底电流
1.Mechanism and impact of the double-hump substrate current in high-voltage double diffused drain MOS transistors;高压双扩散漏端MOS晶体管双峰衬底电流的形成机理及其影响
2.Modification of MOSFET s Substrate Current Model in Deep Submicrometer Regime;MOSFET衬底电流模型在深亚微米尺寸下的修正
3.As a monitor of hot-carrier-injection reliability,the substrate current(ISUB)usually increases in high voltage transistors,but has only one peak in standard low voltage transistors.基于泊松方程和幸运电子模型,推出了适用于高压n型器件衬底电流(ISUB)的公式,并且为模拟和实验测量的结果所验证。
延伸阅读
衬经衬纬圆纬机 用以编织衬经衬纬针织物的圆型纬编针织机。它在编织平针组织的同时,衬入不参加成圈的经纱和纬纱,形成衬经衬纬针织物。其基本组织结构如图1所示。 这种针织物的纵向和横向的延伸度都较小，具有机织物的特性，除适合做各种外衣外，还可作灌溉用涂塑管道的骨架。在衬经衬纬圆纬机上，有三组纱线：衬经纱、衬纬纱、成圈纱参加编织。其编织机构如图2所示。 机器的针筒固定在台面上，三角座相对于针筒回转。衬经纱从固定的纱架上引出，通过分经盘（或导经片）由上而下经过针间衬入织物线圈纵行间。所有衬经纱从针筒口向外倾斜一定角度，形成圆锥面，便于成圈纱的喂入。衬纬纱筒子架位于衬经纱外侧，与三角座一起回转，通过导纬器将纬纱衬入针背与经纱之间，依次横向搁在针上的旧线圈上方。成圈纱筒子架位于衬经纱内侧，与三角座同步回转。导纱器处于织针与衬经纱之间，把成圈纱喂入针钩内编织成圈，形成平针组织，同时，使其线圈的沉降弧从内侧包住衬经纱，圈柱从外侧包住衬纬纱，从而使三组纱线结合在一起，形成一种基本的衬经衬纬针织物。 衬经衬纬针织物用于外衣产品时，由于衬经纱和衬纬纱之间没有交织点，易于拱出，因此，需改变其组织结构。例如，通过导经片将衬经纱在针头上绕一圈，并把它向下转移到旧线圈处,再和旧线圈一起向上套圈,使衬经纱与成圈纱结合得更紧密。另外，适当加粗衬纬纱，也可提高衬经衬纬针织物的结构稳定性。
