1)semi-insulating半绝缘
1.Influence of deep level defects on electrical compensation in semi-insulating InP materials;深能级缺陷对半绝缘InP材料电学补偿的影响
2.A model is presented to describe a compensation mechanism for semi-insulating 6H-SiC grown with the intentional doping of vanadium.研究了钒掺杂生长半绝缘6 H-SiC的补偿机理。
3.The impurity distribution,doping activation mechanism,and interaction between Fe atoms and point defects in Fe-doped and annealed undoped semi-insulating(SI) InP materials are compared.比较了掺Fe和非掺退火半绝缘(SI)InP材料中Fe杂质的分布,掺杂激活机理以及Fe原子与点缺陷的相互作用。
英文短句/例句
1.Doping Behavior of Semi-insulating GaAs by Neutron Transmutation;半绝缘砷化镓中子嬗变掺杂行为研究
2.The Research of Deep Level EL2 in SI-GaAs PCSS;半绝缘GaAs光导开关中EL2深能级研究
3.The Formation and Characteristics of Semi-insulating SiC with the Doping of Vanadium;钒掺杂半绝缘SiC的制备及特性研究
4.Determination of the Resistivity of Semi-insulating Semiconductors by Non-contact Measurement半绝缘半导体切片电阻率无接触测定方法研究
5.Study on the Impurity and Microdefects in Semi-Insulating Gallium Arsenide Crystals;半绝缘砷化镓（SI-GaAs）单晶中的杂质与缺陷
6.Fe Doping Activation and Defect in Semi-insulating InP;半绝缘InP单晶的Fe掺杂激活及缺陷研究
7.Theory Study of Luminous Charge Domain in Semi-Insulated GaAs Photoconductive Semiconductor Switch;半绝缘GaAs开关中光激发电荷畴的理论研究
8.Electrical Characterization Measurement of Semi-insulating SiC Single Crystal;半绝缘SiC单晶电学参数的测量技术研究
9.metal insulater-semiconductor金属—绝缘体—半导体
10.isolator (-ter)绝缘体;绝缘体;绝缘物;绝缘物;绝缘子;绝缘子
11.isolated gate mos绝缘栅金属氧化物半导体
12.metal-isolator-semiconductor solar cel金属－绝缘体－半导体太阳电池
13.metal-insulator-semiconductor memory金属－绝缘体－半导体存储器
14.metal-insulator-semicoductor infrared detector金属－绝缘体－半导体红外探测器
15.metal insulator semiconductor light emitting diod金属绝缘膜半导体发光二极管
16.mos insulated gate transistor绝缘栅金属氧化物半导体晶体管
17.conductor insulator semiconductor fet金属绝缘体半导体场效应晶体管
18.MISFET (Metal Insulation Semiconductor Field Effect Transistor)金属绝缘半导体场效应晶体管
相关短句/例句
semi insulating半绝缘
1.Photoluminescence which is subtle to deep defect appears in IP annealed semi insulating InP.对液封直拉 (L EC)非掺磷化铟 (In P)进行 930℃ 80 h的退火可重复制备直径为 5 0和 75 mm的半绝缘 (SI)衬底 。
2.The electrical properties of annealed undoped n type InP are studied by temperature dependent Hall effect (TDH) and current voltage ( I V ) measurements for semiconducting and semi insulating samples,respectively.利用变温霍尔和电流 -电压特性 (I- V)两种方法分别对半导体和半绝缘的退火非掺磷化铟材料进行了测量 。
3)semi-insulating GaAs半绝缘GaAs
1.The dark resistivity of semi-insulating GaAs photoconductive-switch which work in non-linear mode before and after break down is studied.为了进一步理解光导开关非线性工作模式机理,通过实验以及理论研究方法,研究了半绝缘GaAs光导开关工作于非线性模式下在不完全击穿前后暗态阻值的变化,认为击穿阶段和锁定阶段改变了材料内部位错区域As原子的形态以及局部电子陷阱EL2的浓度,导致了击穿后暗态阻值的减小。
2.The experiments show that,even if the semi-insulating GaAs photoconductive switch operates under the electrical field of 10.用 15 5 3nm飞秒光纤激光器触发半绝缘GaAs光电导开关的实验表明 ,当光电导开关处于 3 33～ 10 3kV/cm的直流偏置电场并被脉冲宽度 2 0 0fs且单脉冲能量 0 2nJ的激光脉冲照射时 ,开关表现为线性工作模式 ,开关输出峰值电压为 0 8mV 。
4)semi-insulation SOI半绝缘SOI
5)semi insulated GaP半绝缘GaP
1.A piece of semi insulated GaP with high reflecting film for red beam in <100> direction is used as external probe tip.用〈10 0〉面镀红光全反射膜的半绝缘GaP作为外部探头 ,提出以有效调制电压为测量对象 ,对外部电光测量装置进行了电场空间分辨率的测量 。
6)Semi-insulation layer半绝缘层
延伸阅读
半绝缘砷化镓单晶分子式：CAS号：性质：电阻率大于1×107Ω·cm的砷化镓单晶。用掺入铬、氧等深受主杂质补偿硅等浅施主来生长半绝缘单位，也用高压单晶炉用热解坩埚由砷、镓直接合成非掺杂电子迁移率半绝缘单晶。为高速、高频器件及电路、光电集成电路的重要衬底材料。主要用作二氧化碳激光器的耦合输出窗口。
