直拉硅,Czochralski silicon英语短句,例句大全

直拉硅,Czochralski silicon
1)Czochralski silicon直拉硅
1.Effect of ramping from low temperatures on oxygen precipitation in Czochralski silicon;低起始温度的线性升温热处理对直拉硅中氧沉淀的影响
2.FTIR study an VO_2 defect in fast neutron irradiated Czochralski silicon;FTIR研究快中子辐照直拉硅中的VO_2
3.Investigation of the Irradiation Defects in Fast Neutron Irradiated Czochralski Silicon;快中子辐照直拉硅辐照缺陷的研究

英文短句/例句

1.The Czochralski silicon monocrystalline polished wafer with a diameter of eight inches8英寸直拉硅单晶抛光片
2.Investigation of Oxygen Precipitation and Internal Gettering in Czochralski Silicon;直拉硅单晶的氧沉淀及内吸杂的研究
3.Investigation on Rapid Thermal Processing of Czochralski-grown (CZ) Silicon;直拉硅单晶的快速热处理（RTP）研究
4.Investigation of the V_2 defect in fast neutron irradiated Czochralski silicon;快中子辐照直拉硅中V_2的退火研究
5.Investigation of a New Intrinsic Gettering Process for Large-diameter Czochralski Silicon Wafers;大直径直拉硅片的一种新型内吸杂工艺研究
6.Defect Engineering in Czochralski Silicon Used for Large-scale Integrated Circuits;大规模集成电路用直拉硅单晶的缺陷工程
7.Effect of High Temperature Hydrogen Annealing on Oxygen Behavior in Czochralski Silicon;氢气氛下高温退火对直拉硅中氧的行为的影响
8.Effect of Rapid Thermal Processing on Oxygen Precipitation Behavior in Czochralski Silicon;快速热处理对直拉硅片氧沉淀行为作用
9.Investigation of Oxygen Precipitation and Induced-Defects in Fast Neutron Irradiated Czochralski Silicon;快中子辐照直拉硅中氧沉淀及诱生缺陷研究
10.Simulation of CZ and Optimizaton of Cusp Magnetic Field Character;勾形磁场中直拉硅单晶的模拟与磁场参数优化
11.Effect of Vacancy on Nucleation for Oxygen Precipitation in Czochralski Silicon;空位对直拉硅单晶中氧沉淀形核的作用
12.Oxygen Precipitation Behaviors in Conventional and Nitrogen-codoped Heavily Arsenic-doped Czochralski Silicon;普通和掺氮的重掺砷直拉硅单晶的氧沉淀行为
13.Effect of Hydrogen Annealing on Oxygen Precipitation and Void in Czochralski Silicon;氢退火对直拉硅中氧沉淀及空洞型缺陷的作用
14.Investigation of the Irradiation Defects and Electrics Performance in Fast Neutron Irradiated Czochralski Silicon;快中子辐照直拉硅的电学性能及辐照缺陷研究
15.Improvement of Φ8" Hot Zone for Φ8" CZSi and the Numeric Simulaion;生长Φ8“直拉硅单晶Φ8”热场研究及数值模拟
16.Study of Impurities and Defects in Germanium Doped Czochralski Silicon for Photovoltaic Applications;掺锗直拉硅中的杂质缺陷及其光伏应用研究
17.Influence on carbon and oxygen contents in CZ Si single crystals by improvement of thermal system of furnace直拉硅单晶炉热系统的改造对氧、碳含量的影响
18.Behavior of Irradiation Donor After Annealing in Electron Irradiated CZ-Si电子辐照直拉硅退火后辐照施主行为的研究

相关短句/例句

CZSi直拉硅
1.FTIR Sudy on V_2 Defect in Fast Neutron Irradiated CZSi;快中子辐照直拉硅中V_2的FTIR研究
2.INVESTIGATION ON OXYGEN PRECIPITATION IN NCZSi;氮气氛直拉硅中氧沉淀的研究
3.Control and Utilization of Defect for CZSi Wafer;直拉硅片杂质缺陷的控制与利用
3)Czochralski silicon直拉单晶硅
1.The cost of nitrogen-doped Czochralski silicon is lower than that of the Czochralski silicon.掺氮直拉单晶硅的成本比普通直拉单晶硅的成本要低,掺氮直拉单晶硅的机械强度比普通直拉单晶硅的高,太阳电池片可以做的更薄,这些都有利于降低太阳电池的成本。
4)CZ-Si直拉硅单晶
1.A Guide System in φ200mm CZ-Si Growth;φ200mm太阳能电池用直拉硅单晶生长中导流系统的研究
5)CzSi直拉硅单晶
1.Study of CZSi Characteristic Doped with Element Ge at Impurity Level;直拉硅单晶中掺入等价元素锗可以有效地抑制氧施主，提高硅片机械强度，改善氧沉淀的状况。
6)CZSi-doped Ge掺锗直拉硅