1)B-dopedB掺杂
1.Large Area Deposition of B-doped CVD Diamond Film;大面积B掺杂CVD金刚石膜的制备研究
2.Used hydrothermal method to synthesis B-doped nano-TiO_2 with visible light response,and B atoms existed as B-O-Ti.采用水热法合成了具有可见光响应的B掺杂纳米TiO_2,其中B以B-O-Ti的结构存在。
英文短句/例句
1.Electrochemical behavior of boron-doped diamond thin-film electrodes grown on tantalumTa衬底B掺杂金刚石薄膜电极极化特性
2.Synthesis of Visible Light Responsive B-Doped TiO_2 by Hydrothermal Method and Its Photocatalytic Activity in Phenol Degradation水热法合成可见光响应的B掺杂TiO_2及其光催化活性
3.Progress in modification of BaCoO_3-based oxygen permeation membrane material by A or B-site dopingA、B位掺杂改性BaCoO_3基透氧膜材料的进展
4.Study of Hydrogen Storage Properties of TiF_3-Doped Li-Mg-B-H SystemTiF_3掺杂Li-Mg-B-H体系储氢性能研究
5.Investigation of ferroelectric property in high-valence B-site doped Bi_4Ti_3O_(12) ceramic;高价B位掺杂Bi_4Ti_3O_(12)陶瓷的铁电性能研究
6.Catalytic synthesis of ethyl acetoacetate 1,2-Propanediol ketal with H_3PW_(12)O_(40)/PAn;磷钨酸掺杂聚苯胺催化剂催化合成苹果酯-B
7.Effect of B-site equal-valent doping on ferroelectric properties of SrBi_4Ti_4O_(15) ceramicsB位等价掺杂SrBi_4Ti_4O_(15)铁电材料的性能研究
8.A substance that adulterates.掺杂物掺有杂质的物质
9.Preparation and Dielectric Properties of B-site Doped Barium Titanate Ceramics;高价B位掺杂钛酸钡基陶瓷的合成及其介电性能研究
10.Investigation on B-Site Substitution of High T_c Lead Free CaBi_4Ti_4O_(15) CeramicsCaBi_4Ti_4O_(15)高温无铅压电陶瓷的B位高价掺杂改性研究
11.Effects of B and N doping on spin polarized transport in graphene nanoribbonsB与N掺杂对单层石墨纳米带自旋极化输运的影响
12.A first-principles study on electronic structures of (9,0) carbon nanotubes doped with B/N/SiB/N/Si掺杂的(9,0)型碳纳米管电子结构第一性原理研究
13.Study on the Preparation and Properties of Doped and Co-Doped TiO_2掺杂及共掺杂TiO_2的制备及其性能研究
14.Research on Yb~(3+) doping mechanism of ytterbium-doped fiber掺镱石英光纤中Yb~(3+)掺杂机理的研究
15.buried collector dopant隐埋集电极用掺杂剂
16.modulation-doped field effect transistor调制掺杂场效晶体管
17.Her tears mingled with her laughter.她的笑里掺杂着泪水。
18.it is necessary to remove the adulterants before use.使用前不必去除掺杂物。
相关短句/例句
B-dopingB掺杂
1.Theoretic Calculation on the Electronic Structures of Sr_2MgSi_2O_7 by B-doping;B掺杂Sr_2MgSi_2O_7电子结构的理论计算
2.XRD spectra and SEM photos indicate that B-doping plays a great role on the microstructure of ZnO films.研究了利用LPMOCVD技术制备的不同B掺杂浓度对ZnO薄膜的微观结构和光电特性影响。
3)B site dopingB位掺杂
1.Focus on describing the situation of A an B site doping to Bi4Ti3O12 and the improvement of them to the ferroelectric and fatigue properties.分析了对铁电薄膜Bi4Ti3O12进行A位、B位掺杂时,Bi4Ti3O12铁电性及疲劳特性的改善及相应的理论解释,并指出Bi4Ti3O12值得进一步深入研究的领域。
4)B-site dopingB位掺杂
1.The effect of B-site doping with different ion sizes and valences on the remnant polarization and fatigue endurance was investigated to clarify the mechanism of B-site doping.制备了不同半径和价数的离子B位掺杂的BTNb,BTV,BTZr,BTHf陶瓷,并且对其性能进行了测量。
5)boron (nitrogen)-dopingB(N)掺杂
6)Real time B doped实时B掺杂
延伸阅读
半导体材料掺杂半导体材料掺杂doping for semiconductor material bondootl Col}{00 ehonzo半导体材料掺杂(doping for semiconduCtormaterial)对材料掺入特定的杂质以取得预期的物理性能与参数的半导体材料制备方法，在大多数情况下，是使用掺杂后的半导体材料进行器件制备。掺杂的具体目的有:(l)获得预期的导电类型，如p型掺杂或n型(见半导体材料导电机理)掺杂;(2)获得预期的电阻率、载流子浓度(见半导体材料导电机理)，如重掺单晶(见简并半导体)、半绝缘砷化稼的制备;(3)获得低的少子寿命(见半导体材料导电机理)，如锗中掺金;(4)获得晶体的良好力学性能，如硅中掺氮;(5)提高发光效率，改变发光波长，如磷化稼中掺氮、掺氧(见发光用半导体材料);(6)形成低维材料及超晶格(见半导体超晶格);(7)调整晶格匹配，如硅中掺锡。 对掺杂的要求主要是:精度、均匀性、分布空间。掺杂的方法有熔体掺杂、气相掺杂、中子擅变掺杂、离子注入掺杂、表面涂覆掺杂(见区熔硅单晶)。掺杂是在半导体材料制备过程的某一个或几个工序中进行，大多数是在单晶拉制过程中进行掺杂，薄膜材料则在薄膜制备过程中进行掺杂，而中子擅变掺杂、离子注入掺杂则离开晶体制备而成为独立的工序。 (万群)
