1)monocrystalline germanium锗单晶
英文短句/例句
1.monocrystalline germaniumGB/T5238-1995锗单晶
2.Monocrystalline germanium slicesGB/T15713-1995锗单晶片
3.Germanium monocrystal--Inspection of dislocation etch pit densityGB/T5252-1985锗单晶位错腐蚀坑密度测量方法
4.Test method for resistivity of silicon and germanium bars using a two-point probeGB/T1551-1995硅、锗单晶电阻率测定直流两探针法
5.Test method for measuring resistivity of monocrystal silicon and germanium with a collinear four-probe arrayGB/T1552-1995硅、锗单晶电阻率测定直排四探针法
6.The Study of Photics Character and Distribution Homogeneity of Ge in Ge-Doped CZSi Bulk Single Crystal;掺锗CZSi单晶光学性质及锗分布均匀性的研究
7."Some common intrinsic semiconductors are single crystals of silicon, germanium, and gallium arsenide."常用的本质半导体是硅、锗以及砷化镓等的单晶。
8." Designations for LiNbO3, LiTaO3, Bi12, GeO20, Bi12 SiO20 piezoelectric crystals"GB/T9532-1988铌酸锂、钽酸锂、锗酸铋、硅酸铋压电单晶材料型号命名方法
9.Collection of metallographs on defects of crystalline germaniumGB/T8756-1988锗晶体缺陷图谱
10.germanium-doped silica core single mode fiber掺锗石英心单模光纤
11.Metal-Induced Crystallization of Amorphous Silicon and Silicon Germanium Films非晶硅和非晶硅锗薄膜的金属诱导结晶
12.germanium low frequency high power triode锗低频大功率晶体三极管
13.Growth and Calculation of Zinc Germanium Phosphide Crystals;磷化锗锌晶体的生长研究及理论计算
14.Selectively Grown SiGe and Metal-Induced Growth of Poly-SiGe Based on UHVCVD;基于UHVCVD的选择性外延锗硅与金属诱导生长多晶锗硅的研究
15.Experimental Investigation of Amorphous Chalcogenide Glass Films as a Holographic Storage Medium非晶形砷硫硒锗薄膜用于全息存储实验研究
16.Research in Growth of Poly-Si_(1-x)Ge_x on SiO_2 by UHVCVD;利用UHV/CVD在SiO_2薄膜上生长多晶锗硅薄膜的研究
17.Research on Nonlinear Property of Erbium Doped PCF and Germanium Doped PCF掺铒及掺锗光子晶体光纤非线性的研究
18.Influence of Substrate Temperature on the Growth of μc-SiGe Thin Film衬底温度对氢化微晶硅锗薄膜生长的影响
相关短句/例句
germanium monocrystalline锗单晶体
3)SiGe bulk硅锗单晶
1.The distribution of impurity Ge in SiGe bulk single crystal which was grown by varying speed CZ was measured by using the SEM-EDS methods, and it was found that the Ge concentration varied from a lower value at head to a highter one at the tail of Si crystal which was doped Ge.利用扫描电镜能谱分析法,对 CZ 法生长的掺锗浓度不同的硅锗单晶中锗浓度进行了测定,结果发现硅中锗的纵向分布是头部浓度较低,尾部锗浓度较高。
4)single crystal of germanium锗单晶<冶>
5)single crystal germanium单晶锗
6)SiGe single crystal锗硅单晶
延伸阅读
锗单晶分子式：GeCAS号：性质：周期表IV族元素半导体。共价键结合，金刚石型结构。晶胞由两类不等价原子组成的两个面心立方晶格套构而成，包胞中包含两个不等价原子。为复式晶格。晶格常数0.56575nm。电子纵向和横向有效惯性质量m分别为1.64和0.0819。重空穴和轻空穴的有效惯性质量为0.36和0.04，为间接带隙半导体。室温禁带宽度0.67eV。本征载流子浓度2.4×1019/m3。纯晶体的电子和空穴迁移率趴39m2(V·s)和0.19m2(V·s)。掺入III和V族原子可制成p型或n型材料。采用区熔法提纯晶体。用直接法制备单晶。为制作高频、低噪声半导体器件的优良材料。
