1)mercury indium telluride碲铟汞
1.Preparation and thermal stability of mercury indium telluride single crystals碲铟汞晶体制备及其热稳定性研究
2.The polycrystalline material of mercury indium telluride(MIT) was synthesized through a direct reaction between high purity Hg,In and Te.以高纯Hg,In,Te单质为原料,通过元素直接化合反应合成了碲铟汞(MIT)多晶料,并利用合成的高纯多晶料,在特殊设计的坩埚中,采用垂直Bridgman法通过自发成核方式成功地生长了尺寸为Φ15 mm×175 mm的MIT单晶体。
2)indium telluride碲化铟
3)HgCdTe碲镉汞
1.Morphology Study on HgCdTe Film Grown of MOVEP;气相外延法生长碲镉汞薄膜的形貌特性研究
2.Study on the Composition and Homogeneity Control of HgCdTe Crystal;碲镉汞晶体组分及其均匀性控制研究
3.Effect of laser energy on annealing of ion implanted HgCdTe;激光能量对碲镉汞注入样品退火效果的影响
英文短句/例句
1.optically optimal tellurium-cadmium-mercury infrared detector光优型碲镉汞红外探测器
2.The Theoretical Analysis and Testing of HgCdTe Loophole P-N Junction;碲镉汞环孔P-N结理论分析与测试
3.LONG-WAVE INFRARED 2048-ELEMENTS LINEAR HgCdTe FOCAL PLANE ARRAY长波红外2048元线列碲镉汞焦平面器件
4.SPECTRAL STUDY ON RESPONSE OF HgCdTe IR TWO-COLOR DETECTOR ARRAYS碲镉汞红外双色探测器响应光谱研究
5.Study on the Microstructure of Hg1-xCdxTe Crystals by Scanning Electron Microscopy碲镉汞晶体结构性质的电子显微术研究
6.The Study of the Micro Dewar for Long Linear HgCdTe IRFPA长线列碲镉汞红外焦平面微型杜瓦的研究
7.Hydrogen Passivate HgCdTe: First-principle Study红外碲镉汞材料氢钝化行为的第一性原理研究
8.Study of PV HgCdTe detector irriated by femtosecond pulse laser in infrared wave length飞秒红外激光辐照PV型碲镉汞探测器实验研究
9.Developments of Wet and Dry Process Techniques for HgCdTe Detector Fabrication碲镉汞探测器制备湿法和干法工艺的研究进展
10.Trends in Two-color Infrared Focal Plane Detectors of MCT双色碲镉汞红外焦平面探测器发展现状
11.Analysis of the Main Defects and Its′ Origin on HgCdTe Film Grown by LPE碲镉汞液相外延薄膜典型缺陷及其起源分析
12.The measurement results for Hg Cd Te photodiodes are presented.文中列出了碲镉汞光电二极管结电容的测量结果.
13.The microstructure of(Hg,Cd)Te crystal has been studied by analyticai EM.用分析电子显微镜观察了碲镉汞晶体的显微结构。
14.Damage Mechanisms of Laser on PV-type Single Element HgCdTe Device and Visible-light CCD;单元光伏型碲镉汞探测器及可见光CCD的激光损伤机理研究
15.Microstructures and Properties of Mercury Cadmium Telluride (HgCdTe) by Pulsed Laser Deposition (PLD)脉冲激光沉积（PLD）碲镉汞（HgCdTe）薄膜材料结构特性的研究
16.Transient and permanent defects of HgCdTe photovoltaic detectors by γ irradiationγ辐射对碲镉汞光伏探测器的暂态损伤与永久损伤
17.NEGATIVE PHOTOVOLTAIC-RESPONSES IN HgCdTe INFRARED PHOTOVOLTAIC DETECTORS IRRADIATED WITH PICOSECOND PULSED LASER皮秒脉冲激光照射下碲镉汞光伏红外探测器的负光伏响应新现象
18.Electro-optical characteristics of arsenic-doped base region long-wavelength HgCdTe n-on-p photodiode detector砷掺杂基区n-on-p长波光伏碲镉汞探测器的光电特性
相关短句/例句
indium telluride碲化铟
3)HgCdTe碲镉汞
1.Morphology Study on HgCdTe Film Grown of MOVEP;气相外延法生长碲镉汞薄膜的形貌特性研究
2.Study on the Composition and Homogeneity Control of HgCdTe Crystal;碲镉汞晶体组分及其均匀性控制研究
3.Effect of laser energy on annealing of ion implanted HgCdTe;激光能量对碲镉汞注入样品退火效果的影响
4)MCT碲镉汞
1.Magnetic-field Effect MCT Crystal Composition Distribution;磁场对布里兹曼法碲镉汞晶体组分分布的作用
2.The In Bump Growth on the Large Scale MCT IR Device;新型大面阵碲镉汞探测器In柱生长工艺研究
3.Study low frequency noise of MCT MW photoconductive detectors by changing background radiation;改变背景辐射研究碲镉汞中波光导探测器低频噪声
5)HgCdTe(MCT)碲镉汞(MCT)
6)mercury telluride碲化汞
延伸阅读
碲化铟分子式：InTeCAS号：性质：黑色或蓝灰色结晶物。四方晶结构，为层状晶。密度6.29g/cm3。熔点696℃。空气中稳定，难溶于盐酸，可溶于硝酸。真空中加热易挥发，蒸气稳定不分解。具有强的各向异性和金属导电性质。由铟和碲直接反应制取。10K时转变为超导体。
