短沟道,short-channel英语短句,例句大全

短沟道,short-channel
1)short-channel短沟道
1.Threshold voltage in short-channel SOI BJMOSFET;短沟道SOI BJMOSFET的阈值电压
2.Through solving possion equation, the characteristics of short-channel MOSFET device is analyzed in details in the following three aspects: the effect of channel length modulation , the change of threshold voltage and potential barrier decrease between source and channel.通过求解泊松方程,从沟道长度调制效应、阈值电压变化及源极同沟道间的势垒变化三个方面详细分析了短沟道MOSFET的器件特性。
3.A threshold voltage model for short-channel MOSFET is developed by solving a 2-D Possion s equation.通过求解二维泊松方程推导了一个简洁的短沟道 MOS的阈值电压模型 ,得到的 DIBL因子可用于分析参数对短沟道效应的影响。

英文短句/例句

1.short channel fet短沟道场效应晶体管
2.Research on Shot Noise Measurement for Short-channel MOSFET Devices短沟道MOSFET散粒噪声测试方法研究
3.Research and Design of Common-Gate Wideband CMOS LNA短沟道下共栅结构宽带CMOS LNA的设计
4.Analysis of 2-D Short-Channel MOSFET Threshold Voltages Model二维短沟道MOSFET阈值电压分析模型
5.Analysis of Threshold Voltage Decreasing for Single-Gate and Double-Gate SOI MOSFET短沟道SOI中的阈值电压下降问题的研究
6.Computer simulation analysis of short-channel effects and corner effectsfor deep sub-micron triple-gate FinFETs深亚微米三栅FinFET短沟道效应和拐角效应计算机模拟分析
7.A short length of pipe made of clay or concrete, used in sewers and drains.瓦管用粘土或混凝土制成用于排水沟或下水道的短管道
8.A drainage passage, as to a culvert.排水沟排水通道，如阴沟
9.gulley emptier/sewage equipment清沟机/下水道设备
10.To make or cut channels in.在…挖沟，在…上开筑水道
11.n-channel transistorｎ沟道场效应晶体管
12.vertical channel fet垂直沟道场效应晶体管
13.channeling effect and blocking effect沟道效应和阻塞效应
14.surface channel ccd表面沟道电荷耦合掐
15.Drains and gutters require to be flushed.下水道和阴沟必须冲洗。
16.The car ran off the road into a ditch.汽车驶离道路跌进沟中.
17.channeled substrate planar laser沟道衬底平面激光器
18.They failed to bridge the chasm.他们未能跨越这道鸿沟。

相关短句/例句

Short channel MOST短沟道MOST
1.This paper discussed the electrical characteristic of short channel MOST at very high temperature.本文以短沟道MOST电学参数的温度特性为研究对象，对高温短沟道MOST的电学特性进行了深入的探讨。
3)Short-channel MOSFET短沟道MOSFET
4)short channel effect短沟道效应
1.The model includes the substrate bias effect, the short channel effect and the relation between these two effects.它综合考虑了衬偏效应、短沟道效应以及两者之间的关系。
2.Based on the hydrodynamic energy transport model, the short channel effect immunity in the deep sub micron grooved gate PMOSFET is studied together with the influences of substrate and channel doping density on that effect immunity.基于流体动力学能量输运模型 ,首先研究了槽栅器件对短沟道效应的抑制作用 ,接着研究了不同衬底和沟道杂质浓度的深亚微米槽栅PMOSFET对短沟道效应抑制的影响 ,同时与相应平面器件的特性进行了对比。
3.I V characteristics and sub threshold characteristics,as well as the short channel effect(SCE) are carefully investigated.研究了 FINFET的 I- V特性、亚阈值特性、短沟道效应等。
5)Short-channel effect短沟道效应
1.Computer simulation analysis of short-channel effects and corner effectsfor deep sub-micron triple-gate FinFETs深亚微米三栅FinFET短沟道效应和拐角效应计算机模拟分析
2.A new kind of sub-50 nm N channel double gate MOS nanotransistors was simulated by solving coupling Poisson-Schrdinger equations in a self-consistent way with a finite element method,and a systematic simulation-based study was presented on the short-channel effects.采用有限元法自洽求解泊松-薛定谔方程,数值模拟了一种新型的亚50nm N沟道双栅MOS场效应晶体管的电学特性,系统阐述了尺寸参数对短沟道效应的影响规律。
3.In this paper the methodology of modeling and characterization of modern MOSFET ,with emphasis on short-channel effects of deep-submicorns devices up to 0.本文基于BSIM标准研究了现代深亚微米级MOSFET器件的建模和特征提取方法 ,着重在于短沟道效应方面 ,其中测试样品由MicronTM公司提供 ,最短沟道长度仅为 0 16微米。
6)short channel effects短沟道效应