1)n-well diffused resistorn阱扩散电阻
1.Latent damage in n-well diffused resistor under ESD stressESD应力下n阱扩散电阻的潜在损伤
英文短句/例句
1.Latent damage in n-well diffused resistor under ESD stressESD应力下n阱扩散电阻的潜在损伤
2.Effect of Thin Zr Layer Insertion on the Ta-N Diffusion Barrier Performance in Cu MetallizationZr层插入对Ta-N扩散阻挡性能的影响
3.Experimental Investigation on the Fabrication of GaSb Cell and the Mechanism of Zinc Diffusion in N-GaSbGaSb电池制备和Zn在N-GaSb晶片中扩散机理的研究
4.Study of electron spin diffusion transport in intrinsic GaAs quantum wells by time-and space-resolved absorbtion spectroscopy本征GaAs量子阱中电子自旋扩散输运的时-空分辨吸收光谱研究
5.Study on Testing for Gate Resistance of Vertical Double-diffused MOSFET;垂直双扩散MOSFET栅电阻的测试研究
6.Effect of N-doping on the microstructure and properties of amorphous SiC:H diffusion barrier filmsN掺杂对a-SiC:H基介质扩散阻挡层结构及性能的影响
7.p-n-p diffused-junction transistorp-n-p 扩散结晶体管
8.Studies on the Polypyrrole/graphite-gas Diffusion Layer Contact Resistance;聚吡咯/复合石墨板—气体扩散层接触电阻研究
9.Determination of Li-ion Diffusion Coefficient via Coulometric Titration and Electrochemical Impendence Method库仑法和电化学阻抗法测量LiFePO_4锂离子扩散系数
10.Evaluation of Effect Prevention of Oncomelania Snail Spread by Pumping Water from Middle of Water Body in Electric Pumping Station电灌站中层抽水阻止钉螺扩散的效果评估
11.They discourage further diffusion.它们阻碍进一步扩散。
12.Hydrogen diffusion Models between Lattice Interstitial Sites and Hydrogen Trapping Sites in the Steel氢在钢中晶格间隙和氢陷阱之间的扩散模式
13.Study of diffusion energy of strain quantum well with thermal annealing热退火中应变量子阱的扩散激活能的研究
14.Research of WN film as diffusion barrier layer in ULSI-Cu metallization集成电路亚45nm级铜布线扩散阻挡层WN薄膜的研究
15.server computingn.1. 【电脑】主从分散式的电脑架构
16.The Probability Quality of the Level Sets of Compact Sets for a N-dimension Diffusion Process;紧集上N-维扩散过程样本水平集的概率性质
17.Study on Scale Inhibitory and Dispersing Agents in Seawater of High Cycles of Concentration (N≥2.0);海水高浓缩倍数(N≥2.0)循环冷却阻垢分散剂研究
18.The doctors are making an attempt to prevent cancer cell spreading医生们试图阻止癌细胞扩散
相关短句/例句
Diffused Resistor扩散电阻
1.A Method of Consistence Improvement for Diffused Resistors in Silicon Sensors;提高扩散硅压力传感器扩散电阻一致性的有效方法
2.Diffused resistor model under ESD stress in linear,saturation,multiplication and snapback,and secondary breakdown regions was analyzed.对ESD应力下扩散电阻的四个区域:线性区、饱和区、雪崩倍增和负微分电阻区、二次击穿区的模型进行了分析。
3)resistance diffusion soldering电阻扩散焊
1.It has been pointed out that the best method at present is the resistance diffusion soldering of copper and low carbon steel on the basis of the potential differece theoty.对用氧-乙炔钎焊、电阻钎焊,铜与低碳钢电阻扩散焊进行了具体的探讨,指出了利用电位差进行铜与低碳钢电阻扩散焊是较好的焊接方法。
4)diffused layer resistance扩散层电阻
5)resistor,diffused扩散电阻器
6)spreading resistance method扩散电阻法
延伸阅读
[3-(aminosulfonyl)-4-chloro-N-(2.3-dihydro-2-methyl-1H-indol-1-yl)benzamide]分子式:C16H16ClN3O3S分子量:365.5CAS号:26807-65-8性质:暂无制备方法:暂无用途:用于轻、中度原发性高血压。