碲镉汞,HgCdTe英语短句,例句大全

碲镉汞,HgCdTe
1)HgCdTe碲镉汞
1.Morphology Study on HgCdTe Film Grown of MOVEP;气相外延法生长碲镉汞薄膜的形貌特性研究
2.Study on the Composition and Homogeneity Control of HgCdTe Crystal;碲镉汞晶体组分及其均匀性控制研究
3.Effect of laser energy on annealing of ion implanted HgCdTe;激光能量对碲镉汞注入样品退火效果的影响

英文短句/例句

1.optically optimal tellurium-cadmium-mercury infrared detector光优型碲镉汞红外探测器
2.The Theoretical Analysis and Testing of HgCdTe Loophole P-N Junction;碲镉汞环孔P-N结理论分析与测试
3.LONG-WAVE INFRARED 2048-ELEMENTS LINEAR HgCdTe FOCAL PLANE ARRAY长波红外2048元线列碲镉汞焦平面器件
4.SPECTRAL STUDY ON RESPONSE OF HgCdTe IR TWO-COLOR DETECTOR ARRAYS碲镉汞红外双色探测器响应光谱研究
5.Study on the Microstructure of Hg1-xCdxTe Crystals by Scanning Electron Microscopy碲镉汞晶体结构性质的电子显微术研究
6.The Study of the Micro Dewar for Long Linear HgCdTe IRFPA长线列碲镉汞红外焦平面微型杜瓦的研究
7.Hydrogen Passivate HgCdTe: First-principle Study红外碲镉汞材料氢钝化行为的第一性原理研究
8.Study of PV HgCdTe detector irriated by femtosecond pulse laser in infrared wave length飞秒红外激光辐照PV型碲镉汞探测器实验研究
9.Developments of Wet and Dry Process Techniques for HgCdTe Detector Fabrication碲镉汞探测器制备湿法和干法工艺的研究进展
10.Trends in Two-color Infrared Focal Plane Detectors of MCT双色碲镉汞红外焦平面探测器发展现状
11.Analysis of the Main Defects and Its′ Origin on HgCdTe Film Grown by LPE碲镉汞液相外延薄膜典型缺陷及其起源分析
12.The measurement results for Hg Cd Te photodiodes are presented.文中列出了碲镉汞光电二极管结电容的测量结果.
13.The microstructure of(Hg,Cd)Te crystal has been studied by analyticai EM.用分析电子显微镜观察了碲镉汞晶体的显微结构。
14.Damage Mechanisms of Laser on PV-type Single Element HgCdTe Device and Visible-light CCD;单元光伏型碲镉汞探测器及可见光CCD的激光损伤机理研究
15.Microstructures and Properties of Mercury Cadmium Telluride (HgCdTe) by Pulsed Laser Deposition (PLD)脉冲激光沉积（PLD）碲镉汞（HgCdTe）薄膜材料结构特性的研究
16.Transient and permanent defects of HgCdTe photovoltaic detectors by γ irradiationγ辐射对碲镉汞光伏探测器的暂态损伤与永久损伤
17.NEGATIVE PHOTOVOLTAIC-RESPONSES IN HgCdTe INFRARED PHOTOVOLTAIC DETECTORS IRRADIATED WITH PICOSECOND PULSED LASER皮秒脉冲激光照射下碲镉汞光伏红外探测器的负光伏响应新现象
18.Electro-optical characteristics of arsenic-doped base region long-wavelength HgCdTe n-on-p photodiode detector砷掺杂基区n-on-p长波光伏碲镉汞探测器的光电特性

相关短句/例句

MCT碲镉汞
1.Magnetic-field Effect MCT Crystal Composition Distribution;磁场对布里兹曼法碲镉汞晶体组分分布的作用
2.The In Bump Growth on the Large Scale MCT IR Device;新型大面阵碲镉汞探测器In柱生长工艺研究
3.Study low frequency noise of MCT MW photoconductive detectors by changing background radiation;改变背景辐射研究碲镉汞中波光导探测器低频噪声
3)mercury cadmium telluride碲镉汞
1.As one of the tunable bandgap semiconductors,mercury cadmium telluride(MCT) is by far the most efficient infrared detectors that operate in a wide wavelength range(from 1 to 25 μm).作为一种禁带宽度可调的半导体,碲镉汞(MCT)至今仍是一种最有效的可在较宽波长(1～25μm)范围内工作的红外探测器。
2.Fabrication of mercury cadmium telluride(HgCdTe) devices has always been a challenging task due to sensitive nature of the material.由于材料性质比较敏感,碲镉汞探测器的制备一直是一项具有挑战性的任务。
4)HgCdTe(MCT)碲镉汞(MCT)
5)HgCdTe碲镉汞材料
1.HgCdTe is a very important fundamental infrared semiconductor material for our national high technology, HgCdTe and related devices have been adopted as the key component in the region of our independent space technology and used in the weather satellite of our country.碲镉汞材料是我国战略性高技术-红外光电技术的重要支撑性与基础性材料,已作为我国的自主技术在国家的航天领域得到了在轨应用。
6)HgCdTe film碲镉汞薄膜
1.Metalorganic chemical vapour phase deposition (MOCVD) is a very important technique to grow high quality HgCdTe films for fabrication of infrared focal plane arrays (IRFPAs).文中讨论了汞源温度、生长温度、衬底材料及互扩散多层工艺 (IMP)等因素在MOCVD外延生长碲镉汞薄膜过程中的作用机理 ,并选择合适的生长条件获得了质量优良的碲镉汞薄膜。
2.Large area n-on-p structures of p-n junction with different proton implantation doses are fabricated on the moleculer beam epitaxial grown HgCdTe films for mid-infrared wavelength region.基于中波响应波段的分子束外延碲镉汞薄膜材料成功制备出不同质子注入剂量的大光敏元 ( 5 0 0 μm× 5 0 0 μm)的n on p结构的p n结 ,并对相应的p n结的电流电压 (I V)特性进行了研究。