1)carrier[英]['k?ri?(r)][美]['k?r??]载流子
1.New method of calculating the probability function of carriers occupying the impurity level;一种计算载流子占据杂质能级的概率的新方法
2.The Summary on Methods of Carrier Mobility Measuring载流子迁移率测量方法总结
3.The Grid Voltage Effect in Carrier Injection of Organic Field-effect Transistor栅压对有机薄膜场效应晶体管中载流子注入的影响
英文短句/例句
1.carrier drift transistor载流子漂移型晶体管
2.carrier storage delay time载流子存储延迟时间
3.hot carriers in semiconductors半导体中的热载流子
4.Evaluation of Hot Carrier Effect of SiGe HBTSiGeHBT的热载流子效应评价
5.Silicon-based CMOS Photonic Devices Using Carrier Dispersion Effect载流子色散型硅基CMOS光子器件
6.The density of carriers in the region has been depleted.在这个区内的载流子浓度被消耗殆
7.Study of Hot-carrier Degradation Effects of MOSFET;MOSFET热载流子退化效应的研究
8.The Study on the Hot-Carrier Effect in Deep Sub-Micron MOSFET;深亚微米MOS器件热载流子效应研究
9.Photo-generated Carriers Decay Properties of Nano-SiC Films;纳米碳化硅光生载流子衰减特性研究
10.Monte Carlo Simulation of the Migration of Carriers in Semiconductor;半导体中载流子迁移的蒙特卡洛模拟
11.Carrier Transport in Wurtzite GaN Using Monte Carlo Method;纤锌矿GaN载流子输运的蒙特卡罗模拟
12.Research on MOSFET Noise and Hot Carrier Effect;MOSFET噪声与热载流子效应研究
13.Theoretical Study of Typical Organic Charge Carrier Transporting Materials典型有机载流子传输材料的理论研究
14.Photocarrier Transport in Potassium Lithium Tantalate Niobate Crystal钽铌酸钾锂晶体载流子迁移性能研究
15.Research on Hot-carrier Effects for Deep-submicron LDD MOSFET深亚微米LDD MOSFET器件热载流子效应研究
16.High Efficiency Organic Light Emitting Devices with Low-Voltage and High Carriers Balance载流子平衡的低压高效有机发光器件
17.Mixed Degradation Mode of DEMOS Under Hot-Carrier StressDEMOS在热载流子应力下的混合失效模式
18.Study on hot carriers effect of Halo LDD Polysilicon Thin Film TransistorHalo LDD多晶硅TFT载流子效应研究
相关短句/例句
charge carrier载流子
1.Measurement of the charge carrier mobility of polymer with the time-of-flight technique;渡越时间方法测量聚合物材料的载流子迁移率
2.These photo generated excitons can be dissociated into free charge carriers by built in field at the organi.在实验工作的基础上，提出双层ｐ－ｎ异质结有机太阳电池中激子和载流子输运的理论模型。
3.Steady condition and law of conservation of momentum are used to explain that total directional movement momentum of all charge carriers through arbitrary intersecting surface is conservative; the energy state of carriers in the superconducting thin film is compared with that in exterior surface layer of normal conductor, superconducting proximity effect is explained by the above two results.运用稳恒条件和动量守恒定律说明了稳恒电路中,穿过任意横截面的全部载流子的定向运动总动量在数值上是守恒的;比较了超导薄膜中和正常导体的外表面层中载流子的能态,用以上的两个结果解释了超导“邻近效应”。
3)carriers[英]['k?ri?][美]['k?r??]载流子
1.Under the influence of semiconductor carriers, within certain frequencies, along the direction of propagation perpendicular to the external magnetic field, magnetostatic surface wave can develop into magnetostatic solitons, with the group velocity and phase velocity being opposite to each other, and the magnitude of the velocity changes with the carriers density.铁磁膜近邻存在半导体载流子的影响下 ,静磁表面波在一定频率范围内与外加恒磁场相垂直的传播方向上能演化成静磁孤子 ,而且静磁表面波群速在一定频率范围会改变运动方向成为反向波 ,其大小受载流子浓度的影
2.The holes injection and transport of the devices were controlled by adjusting doping concentration of 4F-TCNQ for good balance of carriers.研究了传输层的单载流子器件行为,同时,由于注入的电子和空穴数量偏离平衡,器件的整体效率也会受到影响,在实验中通过调节4F-TCNQ的质量百分比,来调控空穴的注入和传输,使载流子达到了较好的平衡。
4)carrier number载流子数
1.This paper models the carrier number in silicon semiconductor using the method of grand canonical ensemble and Fermi-Dirac statistical distributions.将巨正则系综的Fermi-Dirac(F-D)统计法与计算机模拟相结合,从本征半导体硅出发,探讨温度和光照能量对载流子数的影响,试图从理论上定量分析太阳能电池工作状况,对本征硅半导体中载流子数进行计算机模拟,模拟结果与理论规律基本吻合,此方法可为进一步研究掺杂半导体及氧化物半导体空间电荷层载流子数提供参考。
5)hot-carrier热载流子
1.This article introduces the mechanism and causation of hot-carrier effect, emphasizes the way of design about resisting the hot-carrier effect.文章主要介绍了热载流子效应机理及产生原因,从其机理出发着重介绍了抗热载流子效应的设计方法。
2.Responses of MOSFET′s transconductance and threshold voltage to the hot-carrier injection have been studied.对国内常规54HC工艺制作的PMOSFET进行了F-N热载流子注入损伤实验,研究了MOSFET跨导、阈电压等参数随热载流子注入的退化规律,特别是从微观氧化物电荷和界面态变化对阈电压影响角度,对国内外较少见报道的MOSFET热载流子损伤在室温和高温(100°C)下的退火特性进行了研究,并从该角度探讨了MOSFET热载流子注入产生氧化物电荷和界面态的特性。
6)hot carriers热载流子
1.The generation,relaxation,and recombination of hot carriers in ZnSeTe/ZnTe type II multiple quantum well (MQW) structures are investigated using photoluminescence (PL) spectra and the femtosecond pulse pump-probe technique.8/ZnTeII型多量子阱结构中热载流子的产生、弛豫及复合过程。
2.A novel high power microwave detector was described in this paper,which was developed based on hot carriers effect in P type semiconductors for measuring the power of high power microwave(HPM).叙述了基于Ｐ型硅半导体中的热载流子效应研制成功的一种单脉冲高功率微波探测器。
3.Hot carriers refer to the carriers that have gained high kinetic energy after being accelerated by a strong electric field in areas of high field or by impact ionization.热载流子,是由于沟道电场中加速以及碰撞离化产生的具有较大动能的载流子。
延伸阅读
载流子载流子carrier P型半导体中多子浓度勿及少子浓度nP分别为(3)上二式中ND为施主杂质浓度，cm一“;NA为受主杂质浓度，cm一3。 如果对半导体施加外界作用(如用光的或电的方法)，破坏了热平衡条件，使半导体处于与热平衡状态相偏离的状态，则称为非平衡状态。处于非平衡状态的半导体，其载流子比平衡状态时多出来的那一部分载流子称为非平衡载流子。在N型半导体中，把非平衡电子称为非平衡多数载流子，非平衡空穴称为非平衡少数载流子。对P型半导体则相反。在半导体器件中，非平衡少数载流子往往起着重要的作用。201}IUZI载流子(carrier)在半导体中载运电流的带电粒子—电子和空穴，又称自由载流子。在一定温度下，半导体处于热平衡状态，半导体中的导电电子浓度n0和空穴浓度P0都保持一个稳定的数值，这种处于热平衡状态下的导电电子和空穴称为热平衡载流子。 在本征半导体中只发生热激发时，电子数目等于空穴数目，这时热平衡载流子浓度为 no一P。~执 尸/m:m:、备_。/E，、_、 =4 .82火10‘ 51二二匕尹七匕)T万exP{一;开朱{(l) -一‘’‘一(m若/--一厂(ZkTj、一‘式中、。为电子质量，kg;m言为电子有效质量，kg;。了为空穴有效质量，kg沃为玻耳兹曼常数，J/K;E:为禁带宽度，eV;n、为本征载流子浓度，cm一”;T为绝对温度，K。 对于杂质半导体，N型半导体中的电子和P型半导体中的空穴称为多数载流子(简称多子)，而N型半导体中的空穴和P型半导体中的电子称为少数载流子(简称少子)。在强电离的情况下，N型半导体中多子浓度、及少子浓度丸分别为(2)、|七卜l|坑二凡一一一一
