1)chemical vapor deposition化学气相淀积
1.Porous γ -Al 2O 3 ceramic membranes were modified by atomic layer chemical vapor deposition technique.采用原子层控制生长化学气相淀积方法对多孔γ -Al2 O3陶瓷膜进行缩孔修饰研究 。
2.SiCl_4 and NH_3 as its precursors ,amorphous Si_3N_4 ultrafine powder was synthesized with high purity and narrow size distribution by radio frequency plasma chemical vapor deposition.利用高频等离子体化学气相淀积方法以四氯化硅及氨为原料，合成了粒度小、粒径分布均匀、氮含量为36。
3.Ultrafine AIN powder was synthesized by chemical vapor deposition of anhydrous AlCl_3 and NH_3 at 700～1000℃.在700～1000℃下,用无水AlCl_3和NH_3的化学气相淀积反应合成得到了AlN超细粉末,并研究了反应温度、总流量、AlCl_3浓度等对AlN粉末理化性质的影响。
英文短句/例句
1.Thermodynamic Study on CVD Tungsten Silicide System化学气相淀积硅化钨体系热力学研究
2.The higher value is comparable to those obtained in CVD epitaxy.这个高的数值可以和从化学气相淀积外延得到的数值相比拟。
3.Self-Organized Growth of Ge Quantum Dots by UHV/CVD超高真空化学气相淀积自组织生长锗量子点(英文)
4.photochemical vapor deposition oxide光化学汽相淀积氧化物
5.metallo organic chemical vapor deposition有机金属化学汽相淀积
6.cvd polysilicon化学汽相淀积多晶硅
7.plasma chemical vapor deposition等离子体化学汽相淀积
8.modified chemical vapor deposition改进的化学汽相淀积
9.chemical vapor deposition reactor化学汽相淀积反应器
10.thermally activated chemical vapour deposition热活化化学气相沉积
11.plasma activated chemical vapour deposition等离子体化学气相沉积
12.epitaxial CVD growth外延化学气相沉积生长
13.Simulation and optimization design in MOCVD reactor金属有机化学气相沉淀反应器结构的模拟优化
14.laser induction chemical vapor deposition method激光诱导化学气相沉淀法（制纳米微粒的方法）
15.Tentative Experiment of Synthesizing Single-Crystal Diamond Films by Chemical Vapor Deposition化学气相沉淀法合成单晶金刚石膜实验探索
16.The Research on the Gas Phase Process of Electron-Assisted Chemical Vapor Deposition from CH_4/H_2 Mixture Gas;CH_4/H_2系统电子助进化学气相沉积气相过程研究
17.Study of CVD Function coating on Molybdenum Substrate钼表面化学气相沉积功能涂层的研究
18.Preparation of SiC Filament by Chemical Vapor Deposition;化学气相沉积法制备钨芯SiC纤维
相关短句/例句
CVD化学气相淀积
1.Development of double-chamber UHV/CVD system;双生长室超高真空化学气相淀积系统的研制
2.The applications of CVD in the preparations of ultrafine powders,nanocompositers,and functionally gradient materials were discussed,the processing features of CVD,the properties and the microstructures of the materials thus prepared were analyzed with specific examples.本文讨论了化学气相淀积在超细粉，纳米复合材料及梯度功能材料制备中的应用，并结合实例分析了化学气相淀积的工艺特性及所制备材料的性能、显微组织特点。
3.12%,were epitaxially deposited on Si(100) substrates via chemical vapor deposition(CVD) process,using C2H4 and SiH4 as C and Si resources,respectively.用化学气相淀积方法,以乙烯为碳源、硅烷为硅源,在Si(100)衬底上外延生长了替位式C组分达1。
3)thermal chemical vapor deposition热化学气相淀积
1.Using standard photolithography,patterned carbon nanotube line arrays were fabricated on silicon substrates by thermal chemical vapor deposition.采用半导体光刻技术在硅衬底上获得图形化掩膜,然后用热化学气相淀积(T-CVD)的方法制备了图形化的碳纳米管线阵列,用扫描电镜和拉曼光谱仪对碳纳米管进行了表征。
4)chemical vapor deposition passivation化学气相淀积钝化法
5)LPCVD低压化学气相淀积
1.Research on Polysilicon Thin Film Technics by LPCVD;低压化学气相淀积多晶硅薄膜工艺研究
2.MOLECULAR DYNAMICS SIMULATION OF THE THICKNESS OF POLYCRYSTALLINE Si MEMBRANE PREPARED BY LPCVD;低压化学气相淀积多晶硅薄膜膜厚的分子动力学模拟
3.The internal stress in silicon-nitride thin films prepared by low-pressure chemical vapor deposition(LPCVD) was studied measured by XP-2 stylus profilometer.研究了低压化学气相淀积SiN(LPCVD)介质薄膜的内应力,采用XP-2型台阶仪测量了SiN介质薄膜的内应力,通过改变薄膜淀积时的工艺参数,观察了反应气体流量比、淀积温度、反应室压力等因素对SiN薄膜内应力的影响。
6)atmospheric pressure chemical vapor deposition (APCVD)常压化学气相淀积(APCVD)
延伸阅读
化学气相淀积英文:cvd(chemical vapor deposition)指把含有构成薄膜元素的气态反应剂或液态反应剂的蒸气及反应所需其它气体引入反应室，在衬底表面发生化学反应生成薄膜的过程。在超大规模集成电路中很多薄膜都是采用cvd方法制备。化学气相淀积特点：淀积温度低，薄膜成份易控，膜厚与淀积时间成正比，均匀性，重复性好，台阶覆盖性优良。
