肖特基,schottky英语短句,例句大全

肖特基,schottky
1)schottky肖特基
1.A p-GaN/Al_(0.35)Ga_(0.65)N/GaN Quantum-Well Ultraviolet Schottky Photodetector;p-GaN/Al_(0.35)Ga_(0.65)N/GaN应变量子阱肖特基紫外探测器
2.Research on the Improvement of High-temperature Working Function of Schottky Diode;改善肖特基二极管高温工作性能研究
3.Study on Silicon Carbide (SiC) Schottky Ultraviolet Photodetectors;SiC肖特基紫外光电探测器的研制

英文短句/例句

1.low-power Schottky diode低功率肖特基二极管
2.isl masterslice集成肖特基逻辑母片
3.Schottky emitter type transistor肖特基发射极型晶体管
4.schottky cell array technology肖特基单元阵列技术
5.schottky barrier photodiode肖特基势垒光电二极管
6.The Study of the Characteristics of Ni/Au Schottky Contact on GaN;GaN基Ni/Au肖特基接触特性研究
7.Study of Schottky Charactaristic of High Performance AlGaN/GaN HEMT;高性能AlGaN/GaN HEMT肖特基特性的研究
8.Studies of Characteristics of 6H-Sic Schottky Diodes;6H-SiC肖特基二极管的特性研究
9.Electrical characteristics of Pt-ZnO Schottky nano-contactPt-ZnO纳米肖特基接触的电学特性
10.Anti-irradiation characteristics of Pt/HgInTe Schottky infrared detectorsPt/HgInTe肖特基红外探测器的抗辐照特性
11.Schottky Characteristic of High Performance AlGaN/GaN HEMT高性能AlGaN/GaN HEMT的肖特基特性
12.STTL (Schottky Transistor-Transistor Logic)肖特基晶体管-晶体管逻辑电路
13.advanced schottky transistor logic改进型肖特基晶体管逻辑电路
14.silicon high-current Schottky barrier switching diode硅大电流肖特基开关二极管
15.depletion metal schottky fet耗尽型肖特基场效应晶体管
16.superlow power schottky ttl超低功率肖特基晶体管晶体管逻辑
17.schottky transistor transistor logic肖特基晶体管晶体管逻辑
18.transistor transistor logic/advanced schottky改进型肖特基晶体管晶体管逻辑

相关短句/例句

Schottky Barrier肖特基
1.Ni Schottky Barrier Diodes on n-type 4H-Silicon Carbide;宽禁带SiC肖特基势垒二极管的研制
2.Temperature Characteristics of 4H-SiC Schottky Barrier Diodes;4H-SiC肖特基势垒二极管温度特性研究
3)schottky contact肖特基结
1.Analysis of structure parameters and current conduction mechanisms of AlGaN/GaN Schottky contacts;AlGaN/GaN肖特基结参数分析与电流运输机理研究
2.Performances of SiC MESFET strongly depend on Schottky barrier height,and the stability of gate Schottky contact will have a further impact on the device performances.SiC MESFET器件的性能强烈依赖于栅肖特基结的特性,而栅肖特基接触的稳定性直接影响其可靠性。
4)Schottky junction肖特基结
1.The improvement of its performance was analyzed by substituting the ZnSe pn junction with the Au/iZnSe/nZnSe (MIS structure) Schottky junction.根据测得的ZnSep n结的外量子效率(QE)曲线,研究了ZnSe/GaAs/Ge叠层多结光电池的ZnSe顶电池结构、优缺点及全电池的电流匹配问题,探讨了用Au/i ZnSe/n ZnSe肖特基结金属/绝缘体/半导体(MIS)结构取代ZnSep n结结构从而改进全电池性能的方法。
2.Au\|GaN Schottky junction has been fabricated on n\|GaN materials by MOCVD and MBE.在 MBE和 MOCVD两种方法制备的 n- Ga N材料上制作了 Au- Ga N肖特基结 ,测定了肖特基结的室温 I- V特性。
5)Schottky diode肖特基管
6)schottky gate肖特基栅