6H-SiC,H-SiC
1)H-SiC6H-SiC
1.Simulation and analysis of 6H-SiC pn junction ultraviolet photodetector;6H-SiC pn结紫外光探测器的模拟与分析
2.Analytical Model Aimed at Source/Drain Series Resistance for 6H-SiC PMOSFET;考虑源漏串联电阻时6H-SiC PMOSFET解析模型
3.An Ensemble Monte Carlo Study of High Field Electron Transport in 6H-SiC;6H-SiC高场输运特性的多粒子蒙特卡罗研究
英文短句/例句

1.Growth of 3C-SiC Buffer and SiCGe Film on 6H-SiC;6H-SiC上3C-SiC缓冲层及SiCGe薄膜的生长
2.Effects of a Buffer Layer on the Hetero-epi-growth of SiCGe on 6H-SiC;3C-SiC缓冲层对在6H-SiC上生长SiCGe的影响
3.Investigation the Mechanism of Ni Based Ohmic Contacts to SiC;Nickel/6H-SiC欧姆接触机理研究
4.Studies of the Property of Interface on SiO_2/6H-SiC and the Defects in SiO_2;SiO_2/6H-SiC界面特性及其氧化层缺陷研究
5.Study of the Growth Characteristics of P-SiCGe Layers Grown on 6H-SiC Substrates;6H-SiC衬底上生长p-SiCGe薄膜的研究
6.Infrared Spectra Study of the Electrical Properties of 6H-SiC;6H-SiC单晶电参数的红外光谱研究
7.A Study of 6H-SiC Heterojunction Source/Drain MOSFET;6H-SiC异质结源漏MOSFET的研究
8.Study of the SiO_2 Film by Thermal Oxidation on 6H-SiC;6H-SiC表面热氧化生长的SiO_2特性研究
9.Studies on Metal-Semiconductor Contacts of 6H-SiC and Some Interrelated Processes;n型6H-SiC金半接触及相关工艺研究
10.Studies of Characteristics of 6H-Sic Schottky Diodes;6H-SiC肖特基二极管的特性研究
11.Pinning Effect of the Neutron-irradiated 6H-SiC Crystals中子辐照6H-SiC晶体中的钉扎效应
12.Low-Temperature-Dependent Raman Study on A_1(LO) Mode of 6H-SiC6H-SiC的A_1(LO)拉曼峰低温温度特性研究
13.Effect of hydrofluoric acid etching time on Ni/6H-SiC contacts氢氟酸刻蚀对Ni/6H-SiC接触性质的作用
14.EFFECT OF NEUTRON-IRRADIATION ON SPECIFIC HEAT CAPACITY OF 6H-SiC CRYSTAL中子辐照对6H-SiC晶体比热容的影响
15.Research Progress in Irradiation Effects of 6H-SiC Materials and Devices6H-SiC材料与器件辐照效应的研究进展
16.Study on Analytic Model of C-V Relationship of 6H-SiC Buried-Channel MOSFET6H-SiC埋沟MOSFET的C-V解析模型研究
17.Analysis on Surface Morphology and Defect Generation at the Initial Stages of 6H-SiC Sublimation Growth6H-SiC成核表面形貌与缺陷产生的研究
18.C-V characteristics of 6H-SiC buried-channel MOSFET6H-SiC埋沟MOSFET的C-V特性研究
相关短句/例句

6H-SiC single crystal6H-SiC单晶
3)6H-SiC films6H-SiC薄膜
1.Heteroepitaxial growth and characterization of 6H-SiC films on C-plane sapphire substrates using LPCVD;C面蓝宝石衬底上6H-SiC薄膜的低压化学气相外延生长与表征
4)SiO_2/6H-SiCSiO2/6H-SiC
5)Gate-oxidation of 6H-SiC6H-SiC栅氧化
6)H-SiC MOSFET6H-SiCMOSFET
延伸阅读

bioactive glass-ceramic composite reinforced by SiC whisker分子式:CAS号:性质:由碳化硅晶须与生物活性玻璃陶瓷复合而成的生物陶瓷复合材料。高强度、高弹性模量、无毒的碳化硅晶须在陶瓷基材中弥散分布,使材料中的裂纹相对均匀,裂纹扩展发生转向和分支;外力作用下碳化硅晶须拔出时产生的拔出效应,使复合陶瓷的弯曲强度达460MPa,断裂韧性达4.3MPa·m1/2,维伯尔系数高达24.7,标志着它是可承力的生物陶瓷复合材料。