射频功率,RF power英语短句,例句大全

射频功率,RF power
1)RF power射频功率
1.Effect of RF power on the structure and properties of diamond-like carbon films;射频功率对类金刚石薄膜结构和性能的影响
2.Design of RF Power LDMOS Device;射频功率LDMOS器件设计
3.The influence of RF power and oxygen ratio on the grain size,the residual stress and optical properties was investigated by X-ray diffraction and transmission spectra.通过XRD和透射光谱研究了射频功率和氧气比例对ZnO薄膜的晶粒尺度、应力状态和光学性能的影响。

英文短句/例句

1.Design of High Performance and Low Consumption Ratio Frequency Power Amplifier;高性能低功耗射频功率放大器的设计
2.The power of the modulated carrier wave is increased by the RF power amplifier.射频功率放大器增加了调变载波的功率。
3.Study of Feedforward Linearization Technology for RF Power Amplifier;射频功率放大器前馈线性化技术研究
4.Research and Development of the 800MHz Radio Frequency Power Amplifier;800MHz射频功率放大器的研制
5.Design a 2W HVMOS RF Power Amplifier;2W HVMOS射频功率放大器的设计
6.Study on the Large-signal Modeling of GaAs RF Power MESFET;砷化镓射频功率MESFET大信号模型研究
7.The Research and Design of CMOS RF Power AmplifierCMOS射频功率放大器的研究与设计
8.Research on RF Power Amplifier and Method of Its Linearization射频功率放大器及其线性化方法研究
9.Study of RF Power Amplifiers Based on SiC MESFET基于SiC MESFET射频功率放大器研究
10.A RF Power Auto-Calibration System Based on LH79520基于LH79520的射频功率自动校准系统设计
11.Therefore, plasma etching anisotropy can be improved by increasing rf frequency or rf-bias power.因此,等离子体刻蚀的各向异性可以通过增加射频频率和射频功率来改善。
12.The factors influencing the radio frequency acceptance are discuss ed.用线性内插法绘出射频功率―频率曲线，并讨论了影响电火工品射频接收的因素。
13.In both cases large power sources are required.在两种情况中都需要大功率的射频源。
14.Design and Realization of the RF Predistortion Power Amplifier System;射频预失真功率放大系统设计与实现
15.Analysis and Optimization of Static Characteristics of RF High Power LDMOS;射频大功率LDMOS静态特性分析与优化
16.The Research and Application of RF CMOS PA;射频CMOS功率放大器的研究与应用
17.The Design of CMOS Rfic Power Amplifier;CMOS射频集成电路功率放大器设计
18.Research on Exciting Characteristics of High Power Radio-Frequency CO_2 Laser大功率射频CO_2激光器激励特性研究

相关短句/例句

RF-power射频功率
1.Fluorinated amorphous hydrogenated carbon(a-C∶F∶H) thin films were deposited by RF plasma enhanced chemical vapor deposition(RF-PECVD) reactor with CF_4 and CH_4 as source gases at different RF-power and deposition temperatures and annealed in N_2 atmosphere.本文使用CF4和CH4为源气体,利用射频等离子体增强化学气相沉积(RF-PECVD)法在不同射频功率和沉积温度下制备了掺氟氢化无定形碳(a-C∶F∶H)薄膜,并在N2气氛中进行了不同温度的退火处理。
2.The influence of different RF-power on the crystal structures,surface morphologies and optical properties of ZnO thin films fabricatied on ITO(In_2O_3:Sn)substrates was investigated.结果表明,随着射频功率的提高,沿(002)方向生长的ZnO薄膜的结晶度显著增强,薄膜的表面颗粒略有减小,表面粗糙度由13。
3.Amorphous fluorinated carbon films were deposited by PECVD using CH 4 and CF 4 as source gases at different RF-power.以CH4和CF4的混合气体作源气体,利用等离子体增强型化学气相沉积法(PECVD),改变射频功率,制备了一批氟化非晶碳薄膜样品。
3)radio frequency power射频功率
1.Results show that the radio frequency power and the pressure in the reaction chamber are two main factors that affect the depositing rate distribution of PECVD and both are constrained by the linear relationship p = kW.结果表明,射频功率和反应室气压是影响PECVD淀积速率分布的两个主要因素,且两者受p=kW线性关系的制约,即对于一定的射频功率,总可选择一合适的反应室气压,使淀积速率分布最佳。
4)radio-frequency power射频功率
1.The fluorinated diamond-like carbon(F-DLC) films were prepared by reactive magnetron sputtering under different radio-frequency power with trifluoromethane (CHF_3) and argon(Ar) as source gases and pure graphite as a target.以高纯石墨作靶、氩气(Ar)和三氟甲烷(CHF3)为源气体,用反应磁控溅射法在不同射频功率下制备了氟化类金刚石碳(F-DLC)膜,并对其疏水性进行研究。
5)RF power LDMOS射频功率LDMOS
1.A RF power LDMOS with a trench drift region is optimally designed.对射频功率LDMOS槽形漂移区的结构进行了优化设计。
2.A novel buried n layer partial SOI RF power LDMOS is proposed.提出了具有n埋层PSOI(部分SOI)结构的射频功率LDMOS器件。
3.A novel n-buried-pSOI sandwiched structure for an RF power LDMOS is p roposed.提出了具有n埋层pSOI三明治结构的射频功率LDMOS器件。
6)RF power MESFET射频功率MESFET