1)Laser Molecular Beam Epitaxy激光分子束外延
1.The Technique of Laser Molecular Beam Epitaxy for Thin Films;激光分子束外延制备薄膜技术
2.Compared with metal organic chemical vapor deposition and magnetron sputtering, laser molecular beam epitaxy is an advanced technology developed in recent years and has stronger and stronger co.与金属有机物化学气相沉积和磁控溅射相比,激光分子束外延技术(L MBE)是近年来发展的一种先进的薄膜生长技术,在氧化锌薄膜生长的研究中因其独特的优越性显示出越来越强的竞争力。
3.High quality crystalline zinc oxide thin films were grown on sapphire substrate with lower temperature by laser molecular beam epitaxy (L-MBE) and using a sintered ZnO ceramic as target.用激光分子束外延(lasermolecularbeamepitaxy,L MBE))工艺,采用 这种靶材在蓝宝石基片上较低温度下生长了高结晶质量的ZnO半导体光电子薄膜。
英文短句/例句
1.Magnetic and electrical properties of Fe_3O_4 thin films on MgO(100) substrates by laser molecular beam epitaxyFe_3O_4/MgO(100)薄膜的激光分子束外延与磁电学性能
2.MBE GROWN ANTIMONIDE MID-INFRARED LASERS AND PHOTODETECTORS用分子束外延制备红外锑化物激光器和探测器材料
3.GSMBE Growth and Characterization of Fundamental and QCL Materials;气态源分子束外延材料生长及特性和量子级联激光器材料生长研究
4.crossed laser-molecular beam technique激光－分子束交叉技术
5.Preliminary Study on the Growth of AIN Thin Film by Molecular Beam Epitaxy;分子束外延生长AIN薄膜的初步研究
6.Epitaxial Growth of AlInGaN Quaternary Alloys by RF-MBE射频分子束外延生长AlInGaN四元合金
7.MBE Growth of InP Based PHEMT Epitaxial Materials;分子束外延生长InP基赝配高电子迁移率晶体管外延材料
8.ultraviolet pulse molecular nitrogen laser紫外脉冲氮分子激光器
9.The InSb Epitaxial Growth on GaAs Substrate by Molecular Beam Epitaxy and Its Structure and Properties;GaAs基InSb薄膜的分子束外延生长及其结构与性能
10.Effect of Reconstructures on Molecular Beam Epitaxial Growth of GaAs;表面再构对GaAs分子束外延薄膜生长的影响
11.Structural Study of Molecular Beam Epitaxial Grown Gd_2O_3 and Nd_2O_3 High-k Nano-thick Film分子束外延Gd_2O_3、Nd_2O_3高介电纳米薄膜的结构研究
12.The Study on the Properties of CdTe Buffer Layer for MBE HgCdTe Epilayer分子束外延HgCdTe薄膜的CdTe缓冲层特性研究
13.FABRICATION AND CRYSTALLINITY OF Bi_2Sr_2CaCu_2O_(8+δ)THIN FILMS BY MOLECULAR BEAM EPITAXYBi_2Sr_2CaCu_2O_(8+δ)薄膜的分子束外延法制备及结晶性
14.A Study of In Situ Annealing of MBE Growth Hg1-_xCd_xTe分子束外延生长Hg1-_xCd_xTe材料原位退火研究
15.Study on Near-infrared Laser Spectroscopy of O_2～+;O_2～+分子离子近红外激光光谱研究
16.The shape control over the front-end of excimer laser beam准分子激光前端光束形态控制技术研究
17.Experimental Study on 100 J Level of Excimer Laser Pumped by REB电子束泵浦百焦耳级准分子激光实验研究
18.electron-beam sustainer-pumped laser电子束持续抽运激光器
相关短句/例句
L-MBE激光分子束外延
1.Highly oriented ZnO thin films were prepared on C-plane sapphire substrates by laser molecular beam epitaxy(L-MBE) at the growth temperature of 250,300,350,400 and 450℃.在蓝宝石C面上利用激光分子束外延(L-MBE)的方法,分别在250、300、350、400和450℃下生长了高度C轴取向的ZnO薄膜,并对样品进行了X射线衍射、光致发光谱及反射式高能电子衍射的分析。
2.High quality ZnO films are deposited on SiN_x/Si substrate by laser molecular beam epitaxy(L-MBE).采用激光分子束外延法(L- MBE)在SiNx/Si(111)衬底上制备了高质量的ZnO薄膜,用X射线衍射(XRD)和原子力显微镜(AFM)对薄膜的晶体结构、表面形貌进行了表征,结果表明ZnO薄膜有高度的c轴择优取向,薄膜表面平整致密。
3.C-axis highly oriented ZnO thin films were prepared on C-plane sapphire substrates by laser molecular beam epitaxy(L-MBE) at the growth temperature of 250℃,300℃,350℃,400℃ and 450℃.在蓝宝石C面上利用激光分子束外延(L-MBE)的方法,分别在250℃、300℃、350℃、400℃和450℃生长了高度C轴取向的ZnO薄膜。
3)Pulsed laser molecular beam epitaxy脉冲激光分子束外延
4)L-MBE growth process激光分子束外延工艺
5)Laser molecular beam epitaxy (L MBE)激光分子束外延(L-MBE)
6)MBE[英][,em bi: 'i:][美]['?m 'bi 'i]分子束外延
1.PHOTOLUMINESCENCE STUDY ON MBE LOW TEMPERATURE GROWN GaAs;低温下分子束外延生长GaAs的光致发光研究
2.Studies of MBE-Grown ZnS_xSe_(1-x) Films for Liquid-Crystal-Light-Valve;分子束外延生长液晶光阀用ZnS_xSe_(1-x)薄膜的研究
3.The Study of HgCdTe on Si by MBE;Si基大面积碲镉汞分子束外延研究
延伸阅读
分子束外延（molecularbeamepitaxy(MBE)）分子束外延（molecularbeamepitaxy(MBE)）分子束外延是一种超高真空条件下的物理气相淀积方法。其工作原理是在超高真空系统中，使分子或原子束连续不断地撞击到被加热的衬底表面上而获得均匀外延层。在分子束外延过程中，各种成分的束强度可以分别控制。分子束外延的特点是生长速率相当低，典型的为0.1～0.2μm/h，因而能精细控制生长层的厚度，可以生长极薄的外延层。
