1)AlGaN铝镓氮
1.But in the high-quality AlGaN/GaN heterostructure, there will be two dimensional electron gas (2DEG) system with high electronic density on the surface of heterostructure, even though all layers were.但在高质量的铝镓氮/氮化镓异质结中,即使所有的层均不人为掺杂,仍可以在异质界面上形成高的面电子密度的二维电子气体系。
英文短句/例句
1.Preparation and Field Emission Properties of Algan Semiconductor Film铝镓氮半导体薄膜制备及场发射性能研究
2.Preparation and Characterization of AIN and GaN Nano-materials氮化铝和氮化镓纳米材料的制备与表征
3.Structure-properties of Diethylmetallic Azides Clusters of Aluminum and Gallium by DFT叠氮二乙基铝和镓多聚体结构和性质的密度泛函理论研究(英文)
4.ga al as semiconductor laser镓铝砷半导体激光器
5.High quality GaN film was grown by hydride vapor phase epitaxy(HVPE) using porous AAO as mask.采用均匀的多孔阳极氧化铝做掩膜在氢化物气相外延设备中生长出高质量的氮化镓膜。
6.Research on Fabrication of Nanoporous GaN and Recovery of Damage to GaN Coursed by Dry Etching;纳米多孔氮化镓制备及氮化镓干法刻蚀损伤回复研究
7.Jelenski, A. "Gallium Nitride - New Material for Microwave and Optoelectronics.""氮化镓-微波与光电元件的新材料."
8.Low Frequency Noise Study on GaN-based Light Emitting Diodes;氮化镓基发光二极管的低频噪声研究
9.The Properties of GaN Schottky Photodetectors肖特基型氮化镓紫外光电探测器性能
10.Optical properties of amorphous GaN films deposited by sputtering溅射制备非晶氮化镓薄膜的光学性能
11.Research on the Structural Properties of Ga_nN Clusters氮化镓(Ga_nN)团簇的结构性质研究
12.Research on the Structural and Electronic Properties of Ga_n、Ga_nN、In_n Clusters;镓（Ga_n）、氮化镓（Ga_nN）及铟（In_n）团簇的结构和电子性质研究
13.Research on Formation of One-Dimensional GaN and Ga_2O_3 Nanostructures Ammoniating Ga_2O_3/V on Si Substrates;硅基钒应变层制备氮化镓及氧化镓一维纳米结构的研究
14.The Theoretic Study of Aluminum Hydrazide and Gallium Hydrazide by the Means of Molecular Design;用分子设计法对铝、镓肼簇合物的理论研究
15.Superbright InGaN single-quantum-well blue LED超高亮度蓝色铟镓氮单量子阱发光二极管
16.The Fabrication and Characterization of GaN One-Dimensional Nanomaterials and GaN Films;氮化镓一维纳米材料及薄膜的制备与表征
17.The Study on Photoelectric Behavior of GaN Film by Surface Photovoltaic Spectroscopy利用表面光伏谱研究氮化镓薄膜的光电行为
18.Preparation of GaN Nanowires and SiC Nanowires via CVD Method and Their Characterizations氮化镓与碳化硅纳米线的CVD法制备与表征
相关短句/例句
aluminium gallium nitride alloys氮化铝镓
3)InAlGaN铟铝镓氮
4)AlInGaN铝铟镓氮
1.AlInGaN quaternary alloys were successfully grown on sapphire substrate by radio-frequency plasma-excited molecular beam epitaxy(RF-MBE).利用射频等离子体辅助分子束外延(RF-MBE)技术在蓝宝石衬底上外延了铝铟镓氮(AlInGaN)四元合金,通过改变Al源的束流生长了不同组分的AlInGaN四元合金,材料生长过程中采用反射式高能电子衍射(RHEED)进行了在位检测。
5)AlGaN/GaN氮镓铝/氮化镓
6)AlGaN/PZT铝镓氮/钛酸铝
延伸阅读
磷化铝镓单晶分子式：Ga1-xAlxP；0≤x≤1 CAS号：性质：共价键结合，有一定的离子键成分。立方晶系闪锌矿型结构。为间接带隙半导体，禁带宽度随z变化在2.26～2.45eV范围。采用外延方法制备。是制作半导体可见光发光器件的材料。
