1)heteroepitaxy异质外延
1.InP/GaAs, GaAs/Si and InP/GaAs/Si Heteroepitaxy Technologies and Their Applications in Integrated Optoelectronic Devices;InP/GaAs、GaAs/Si、InP/GaAs/Si异质外延生长技术及其在集成光电子器件中的应用
2.Molecular dynamics simulation has been used to study the heteroepitaxy of Cu/Au(001) and Au/Cu(001) with the embedded atom potentials.利用分子动力学模拟方法研究了Cu/Au(001)和Au/Cu(001)异质外延岛的演化行为。
3.We demonstrate a tunable long-wavelength photodetector by using a heteroepitaxy growth of an InP-In0.基于此低温缓冲层,在GaAs衬底上首先生长GaAs/AlAs材料的F-P腔滤波器,然后异质外延InP-In0。
英文短句/例句
1.Fabrication of high-quality ZnO/Si heteroepitaxial films by pulsed laser depositionPLD工艺制备高质量ZnO/Si异质外延薄膜
2.Investigations of Heteroepitaxy and New Semiconductor Materials for Optoelectronic Integration光电子集成中的异质外延与新材料研究
3.Heteroepitaxial Growth of InP on GaAs Using Low-temperature InGaP Buffer Layers with Graded Composition基于低温InGaP组分渐变缓冲层的InP/GaAs异质外延
4.Geometric phase analysis of strain in AlSb/GaAs hetero-epitaxial film by HRTEMAlSb/GaAs异质外延薄膜应变的HRTEM几何相位分析
5.Heteroepitaxial 4H-SiC Films Growth on AlN/Si(111) Composite SubstratesAlN/Si(111)复合衬底上4H-SiC薄膜的异质外延
6.Effect of Structural Defects in GaN Epitaxial Layer on Its Surface Morphology异质外延GaN薄膜中缺陷对表面形貌的影响
7.Study of Growth Technology and Structural Properties of SiC Films on Sapphire Compound Substrate;碳化硅宽带隙半导体薄膜的异质外延生长技术及其结构性质分析
8.Characterization of homoepitaxial and heteroepitaxial diamond films grown by chemical vapor deposition同质与异质外延掺杂CVD金刚石薄膜的结构与性能
9.Surface Defects of Heteroepitaxial Layers of GaP on GaAs Substrates and Green Emitting Electroluminescent(EL) Diodes(Abstract)在砷化镓衬底上异质外延磷化镓的表面缺陷与绿色发光管(摘要)
10.Study on Energetic Deposition and Heteroepitaxial Behavior by Moleculer Dynamics Simulation;载能沉积过程与异质外延生长行为的分子动力学模拟研究
11.Study on Heteroepitaxial Growth of Au/Cu,Ag/Cu and Cu/Au System by Molecular Dynamics Dynamics Simulation;Au/Cu、Ag/Cu及Cu/Au体系异质外延生长的分子动力学研究
12.Theoretical and Experimental Research on GaAs/Si Heteroepitaxial and Boron-Incorporated Photoelectronic Materials;GaAs/Si和含B光电子材料异质外延生长的理论和实验研究
13.XRD Characterization of GaAs-Based Hetero-Epitaxy Materials and SiC MESFET Structure Materials;GaAs多层异质外延结构材料和SiC MESFET结构材料的X射线双晶衍射分析
14.GaAs/InP and Si/GaAs Heteroepitaxy and Their Applications in Integrated Optoelectronic DevicesGaAs/InP、Si/GaAs异质外延生长技术及其在集成光电子器件中的应用
15.The Calculation of Strain Field in Semiconductor Heteroepitaxy Material and Quantum Dot Relax Degree半导体异质外延材料的应变场及量子点弛豫度的计算
16.Heteroepitaxial growth of InP/GaAs using low-temperature In_xGa_(1-x)P graded buffers基于低温In_xGa_(1-x)P组分渐变缓冲层的InP/GaAs异质外延
17.It is shown that the epitaxial layers have flat interface of heterojunctions and good crystal quality.结果表明外延层具有平坦的异质结界面和良好的晶体特性。
18.Fabrication and Properties of Epitaxial Stannate Thin-films and Heterojunctions with the Perovskite Structure钙钛矿锡酸盐外延薄膜及相关异质结制备与物性研究
相关短句/例句
hetero-epitaxy异质外延
1.The materials of semiconductor hetero-epitaxy and quantum dots are widely used in the fields such as nano-electronics and optoelectronics.半导体异质外延材料和量子点材料在纳米电子学、光电子学中具有广泛的应用前景。
3)heteroepitaxial异质外延
1.Study on the evolution of Au heteroepitaxial islands on Cu(001) by molecular dynamics simulation;Au/Cu(001)异质外延岛演化的分子动力学研究
2.The heteroepitaxial diamond films were grown on the p\|type Si (100) substrate by microwave plasma chemical vapor deposition (CVD).在p型硅 (10 0 )衬底上 ,采用衬底负偏压微波等离子体CVD方法进行了p型异质外延金刚石膜的生长 。
3.In this thesis, the heteroepitaxial growths for Au/Cu(001), Au/Cu(111), Ag/Cu(001), Ag/Cu(111), Cu/Au(001) and Cu/Au(111) were simulated by molecular dynamic method(MD) with embedded atom method(EAM).异质外延生长是薄膜生长中的重要研究课题,从原子水平上认识异质薄膜生长的物理本质,对于改进制备工艺和提高薄膜质量都有着重要的指导作用。
4)heteroepitaxial growth异质外延
1.The technique about the heteroepitaxial growth of wide bandgap material Carbon Silicon (SiC) thin films and SiC integrate circuits are discussed.对宽禁带半导体材料碳化硅的异质外延技术以及碳化硅集成电路单项工艺技术进行了讨论 ,比较了不同的工艺对集成电路制造的影响 。
5)double heteroepitaxial双异质外延
6)heterostructure epitaxy异质结外延
延伸阅读
异质外延异质外延heteroePitaxy 用到超晶格量子阱激光器等器件上。 半导体异质结外延包括以元素Si和化合物半导体GaAs或InP为衬底的多元化合物外延。Si上生长511_xGex超晶格已作为改善现有器件和发展新器件的材料。已发展绝缘体上外延硅(S OD为衬底的Si/Si，一xGe二异质外延。GaAs/Si异质外延为降低GaAs集成电路的成本开辟了途径。由于晶格很匹配，AIGaAs/GaAs异质外延研究得最多，并已应用于高速电子器件和量子阱激光器。近来提出用GaP/AIGaAs代替GaAs。该体系的常数更加接近，折射率差别更适合于全光学波导，而且GaP对部分可见光和红外区为全透明。随着氟化物光纤的应用，含Sb的多元化合物可能会在超长波长光通信上得到应用。G欲nP/AIGalnP是可见光激光器的理想材料。HgCdTe/CdTe等H一VI族异质材料是发展红外探测器的关键材料。MBE和MOCVD异质外延研制新型结构和微结构材料，如超晶格量子阱和量子线材料，为提高器件性能和发展新器件开辟了新途径。(莫金现)异质外延hetero印itaxy在一种半导体单晶衬底上，沿着原来的结晶轴或按照特定的结晶学关系，外延一层与衬底材料的性质不同的单晶薄膜的技术。 半导体异质外延的范围很广。1968年美国洛克威尔实验室用金属有机化合物和氢化物，首次在蓝宝石、尖晶石等衬底材料上外延Hl一V、H一VI和砰一VI族半导体薄膜取得成功。由于衬底和外延层晶体特性的差异，大部分异质外延存在晶格失配和界面热应力等恶化外延层特性的问题。70年代异质外延取得了很大进展。随着液相外延(LPE)、气相外延(VPE)、分子束外延(MBE)和金属有机化合物气相外延(MOCVD)等技术的相继出现且日趋完善，不仅已能生长很完整的异质界面，材料的组分、掺杂浓度和各层厚度在原子级范围内得到了精确控制。多种异质结已做成超晶格结构，并应
