1)FFET铁电场效应晶体管
1.A hyperbola model of I _D- V _Gcharacteristics of ferroelectric field-effect-transistors(FFETs) with Ag/Bi_4Ti_3O_ 12gate was brought forward,which is based on the theory of MOS device and the experimental data of the FFET.在理论分析的基础上,结合铁电材料特性及实验数据,提出了Ag/Bi4Ti3O12栅n沟道铁电场效应晶体管转换(ID-VG)特性的双曲模型并进行了数值模拟。
2.Objective To investigate characteristics of p-channel field-effect-transistor(FFET) with Metal/ferroelectric/Metal/Insulator/Si substrates(MFMIS) structure.目的研究金属/铁电/金属/多晶硅/绝缘层/Si衬底(MFMIS)结构的p沟道铁电场效应晶体管的性能。
英文短句/例句
1.Study on Characteristics of Ferroelectric Field Effect Transistor with Pt/PZT/Pt StructurePt/PZT/Pt结构铁电场效应晶体管性能研究
2.field-effect-transistor resistor场效应晶体管电阻器
3.double diffused mos fetdmos场效应晶体管
4.metal insulator semiconductor fetmis场效应晶体管
5.Key Technology Research of GaN Based Metal-ferroelectric-semiconductor Field Effect Transistor;GaN基金属—铁电体—半导体场效应晶体管关键技术研究
6.The failure mechanism and device mechanics of ferroelectric thin film field-effect transistor memory铁电薄膜场效应晶体管存储器件的失效机制及器件力学
7.polysilicon fet多晶硅场效应晶体管
8.charge coupled fet电荷耦合 场效应晶体管结构
9.bipolar fet integrated circuit双极 场效应晶体管集成电路
10.enhancement mode fet integrated circuit增强型场效应晶体管集成电路
11.resistive insulated gate fet电阻绝缘栅场效应晶体管
12.capacitor coupled fet logic电容耦合式场效应晶体管逻辑
13.power MOSFET gate drive circuit功率场效应晶体管栅极驱动电路
14.Pentacene field-effect transistors with cheap electrode一种廉价电极的并五苯场效应晶体管
15.Di-electrophoresis assembly and fabrication of SWCNT field-effect transistorSWCNT场效应晶体管的介电泳装配与制造
16.vertical junction fet垂向结型场效应晶体管
17.n-channel transistorｎ沟道场效应晶体管
18.vertical channel fet垂直沟道场效应晶体管
相关短句/例句
ferroelectric field effect transistor铁电场效应晶体管
1.Due to the advantage of non-destruction read out, Ferroelectric Field Effect Transistor (FFET) is supposed to be the ideal potential memory device and has been widely investigated.铁电场效应晶体管(FFET)存储器能够实现非破坏性读出，是一种比较理想的存储方式，因此从一开始就受到人们极大的关注。
3)FFETs铁电场效应晶体管
1.Metal-ferroelectric-semiconductor field-effect-transistors (FFETs) with Ag/Bi_4Ti_3O_ 12 /p-Si gate were fabricated using the high quality Bi_4Ti_3O_ 12 on p-Si substrates prepared by Sol-Gel technique.在溶胶-凝胶工艺获得高质量Bi4Ti3O12薄膜的基础上,制备了Ag/Bi4Ti3O12栅n沟道铁电场效应晶体管。
4)metal-ferroelectric-semiconductor(MFS)金属-铁电体-半导体场效应晶体管
5)Ferroelectric nonvolatile memory field effect transistor (FEMFET)铁电存储场效应晶体管(FEMFET)
6)ferroelectric field effect transistor memory铁电场效应晶体管存储器
延伸阅读
晶体管-晶体管逻辑电路晶体管-晶体管逻辑电路transistor-transistorlogic集成电路输入级和输出级全采用晶体管组成的单元门电路。简称TTL电路。它是将二极管-晶体管逻辑电路（DTL）中的二极管，改为使用多发射极晶体管而构成。TTL电路于1962年研制成功，基本门电路的结构和元件参数，经历了3次大的改进。同DTL电路相比，TTL电路速度显著提高，功耗大为降低。仅第一代TTL电路产品，就使开关速度比DTL电路提高5～10倍。采用肖特基二极管的第三代TTL电路，开关时间可缩短到3～5纳秒。绝大部分双极型集成电路，都是TTL电路产品。
