电注入,Electrolysis英语短句,例句大全

电注入,Electrolysis
1)Electrolysis[英][?,lek'tr?l?s?s][美][?'l?k'trɑl?s?s]电注入
1.The electrolysis was performed under three kinds of different conditions,and dependency of temperature and voltage on concentration of color center was investigated in detail.用自制的电注入装置,对氯化钠(NaCl)晶体进行电注入并使之有效着色,在晶体中产生F色心、胶体(C)心和一些未知色心。

英文短句/例句

1.Electrolysis of Alkali Halide and Alkaline Earth Halide Crystals and Electrolysis Mechanism;碱卤晶体和碱土卤化物晶体电注入及电注入机理
2.Preparation of Electrolytic Coloration Appatatus and Spectral Property of Color Centers in Electrolytically Colored Crystals;晶体电注入装置研制和电注入着色晶体色心光谱特性
3.ion implantation gate MOS integrated circuit离子注入ＭＯＳ集成电路
4.Bimatron (Beam Injection Magnetron)电子束注入式磁控管
5.ion-implanted MOS circuit离子注入金属氧化物半导体电路
6.implanted channel注入沟道-集成电路工艺用
7.IIIL (isoplanar integrated injection logic)等平面集成注入逻辑电路
8.impregnate with thorium oxide to increase thermionic emission.注入镀氧化物使增加热电子发射。
9.Insert two R6 (size AAA) batteries with the + and - properly aligned.插入2个5号电池,注意对准+-极。
10.electrically alterable avalanche injection type readonly memory电改写雪崩注入型只读存储器
11.pulse input meter for connection to impulsing meters脉冲注入电度表,与脉冲计相连接
12.non-reentrant beam crossed-field amplifier tube非重入电子注正交场放大管
13.reentrant beam crossed-field amplifier tube重入电子注正交场放大管
14.Multi-level Reinjection Voltage Source Conversion Based on DSP;基于DSP的多级注入式电压源型变换器
15.Optical and Electrical Properties Studies of Different Ions Implanted Gallium Nitride;离子注入GaN的光学和电学特性研究
16.The Electrical Property Research of Polyether Sulfone Film by Ion Implantation;离子注入聚醚砜薄膜的导电特性研究
17.An Improved Current-Inpouring Mixer Based on CMOS Technology基于CMOS工艺的改进型电流注入混频器
18.The Nine-level Injection of Voltage Source Inverter on DSP基于DSP的九级注入式电压源型变流器

相关短句/例句

charge injection电荷注入
1.With this energy model, and considering the influences of charge injection and field electron emis.基于固体的能带理论 ,提出了 2类试品在金属电极介质的界面处不同的能量状态分布模型 ;并在此基础上同时考虑电荷注入复合和场致电子发射对发光的影响 ,解释了 2类试品发光的差异性 ,指出了采用和未采用真空溅射金属电极的氧化铝陶瓷存在不同的沿面闪络起始机理及发展过程。
2.The nonideal characteristics of switched capacitor(SC) integrators is analysed in detail, and a noninverting SC integrator that is insensitive to parasitic capacitors is presented, with shunt capacitors especially to reduce the harmonic distortion and noise caused by channel charge injection.分析了开关电容积分器的非理想特性,同时设计了一个对寄生电容不敏感的同相开关电容(SC)积分器,并特别采用旁路电容减小沟道电荷注入引起的谐波失真和噪声。
3.The circuit non-idealities of the modulator such as charge injection errors, conductance ratio error, settling error and kT/C noise were modeled behaviorally using SIMULINK based on the relationship between error and parameters of MOS FET.通过计算晶体管模型参数与误差的关系对电路的非理想特性如:电荷注入误差、输入输出电导比误差、设置误差噪声误差等进行了SIMULINK行为建模。
3)Electron injection电子注入
1.Study of electroluminescence and electron injection on novel red polyelectrolytes copolymer;高效饱和红光聚电解质的发光及电子注入特性研究
2.The key factors of the ineffciency of this solar cell were discussed,such as electron injection and dye/Zn~(2+) aggregate formation,and some methods were proposed to improve the solar cell efficiency.主要讨论了电子注入、dye/Zn2+的团聚等影响染料敏化纳米ZnO薄膜太阳电池效率的关键问题。
3.By researching the electron injection of the CdSe detector with MIS contacts, it was found that the electron injection is the important reason which affects the properties of CdSe detectors.研究了一种制作CdSe室温核辐射探测器的新工艺 ,并通过对CdSe室温核辐射探测器MIS接触电极电子注入机理的研究发现 ,CdSe探测器形成MIS接触电极可以降低表面漏电流 ,减小探测器噪声 ,提高探测器能量分辨率。
4)injection current注入电流
1.Theoretical analysis and characterization of injection current distribution and influences on optical near-field modes in gain-guided vertical-cavity surface-emitting lasers;增益导波垂直腔激光器注入电流空间分布及其对激光近场模式影响的理论分析和表征
2.After the node sequence injection current is got,considering the influence from other sequence components,the following solution is applied:for positive and negative sequence problems ,node voltage is solved by for/backward sweep method;for zero sequence problem,node voltage is.在求得各序间相互影响各序节点注入电流之后,采取以下求解方法:对正序、负序网络沿辐射支路用前推回代的方法求解,对零序网用常规高斯塞德尔(Gauss-Seidel)迭代法求解,这样可加快求解的速度。
3.This paper proposes an injection current based three phase power flow method.提出了节点注入电流的三相潮流分析方法。
5)injecting voltage注入电压
1.After drawing the injecting voltage-average peak energy scattering dots curves,the scattering dots have been imitated together by adopting curve imitation method.利用静电放电(ESD)模拟器对集成电路芯片进行电压注入损伤效应实验,通过存贮示波器记录的波形进行乘法和积分运算,得到对应注入电压下芯片上吸收的平均峰值功率和能量。
6)electrode injection电极注入