高密度等离子体化学气相沉积工艺,HDP-CVD英语短句,例句大全

高密度等离子体化学气相沉积工艺,HDP-CVD
1)HDP-CVD高密度等离子体化学气相沉积工艺
1.Starting with film deposition’s principle and combining CVD(Chemical Vapor Deposition) theory, to investigate how to deposit STI film by HDP-CVD(High Density Plasma Chemical Vapor Deposition) process.并从薄膜的沉积原理着手,结合化学气相沉积工艺原理,研究利用高密度等离子体化学气相沉积工艺制作的浅沟槽隔离薄膜。
2)HDP CVD高密度等离子体化学气相淀积(HDP CVD)
1.For its stability and good Gap fill performance, high density plasma chemical vapour deposition (HDP CVD) is widely used in VLSI manufacture.高密度等离子体化学气相淀积(HDP CVD),具有卓越的填孔能力和可靠的电学特性等诸多优点,因此它被广泛应用于超大规模集成电路制造工艺中。
3)plasma chemical vapor deposition等离子体化学气相沉积
1.Influence of discharge current on hot cathode plasma chemical vapor deposition of diamond films;放电电流对热阴极等离子体化学气相沉积金刚石膜影响
2.Effect of plasma chemical vapor deposition parameters on electron property in Ar plasma;等离子体化学气相沉积参量对Ar等离子体电子特性的影响
3.The relation between characteristics of hot cathode glow discharge and diamond film deposition techniques in hot cathode glow discharge plasma chemical vapor deposition process was discussed.研究了在热阴极辉光放电等离子体化学气相沉积金刚石膜过程中,热阴极辉光放电特性与金刚石膜沉积工艺的关系。

英文短句/例句

1.plasma activated chemical vapour deposition等离子体化学气相沉积
2.Diamond thin films grown up by microwave plasma CVD微波等离子体化学气相沉积金刚石簿膜
3.WORKING PRINCIPLE OF MICROWAVE PLASMA CVD SET UP微波等离子体化学气相沉积装置的工作原理
4.Study on device of magneto-active PECVD;磁激活增强等离子体化学气相沉积设备的研制
5.TEM Study on Diamond Films Deposited by MPCVD;微波等离子体化学气相沉积金刚石薄膜的电子显微学分析
6.Atmospheric-pressure Plasma Chemical Vapor Deposition for Polycrystalline Silicon Preparation from SiCl_4 and OES Diagnosis由SiCl_4制备多晶硅的大气压等离子体化学气相沉积及发射光谱诊断
7.ANALYSIS OF THE MORPHOLOGIES OF DIAMOND FILM GROWN BY MICROWAVE PLASMA CVD METHOD微波等离子体化学气相沉积金刚石薄膜形貌分析
8.NEW MICROWAVE PLASMA CVD SET UP FOR DIAMOND FILM GROWTH新型微波等离子体化学气相沉积金刚石薄膜装置
9.Research on High Quality Diamond Films in Microwave Plasma CVD;微波等离子体化学气相沉积法制备高质量金刚石膜研究
10.Study on Synthetic Silica Glass by Plasma Chemical Vapor Deposition;等离子体化学气相沉积合成石英玻璃的基础研究
11.New-style Nano-sheets Carbon Films Fabricated by Microwave Plasma Chemical Vapor Deposition微波等离子体化学气相沉积法制备的新型纳米片状碳膜(英文)
12.Hot cathode chemical vapor deposition method was established in order to deposit high-quality diamond films with high deposition rate.为快速沉积高品质金刚石膜,建立了热阴极等离子体化学气相沉积方法.
13.Study on Device of Magneto-active Plasma Enhanced Chemical Vapor Deposition;磁激活等离子体增强化学气相沉积设备的研制
14.The Study on DLC Films Deposited by PECVD;等离子体增强化学气相沉积DLC膜的研究
15.Study on Characteristic of Si_3N_4 Nanopowder Prepared by ICPECVD;ICP等离子体增强化学气相沉积制备纳米粉体氮化硅特性研究
16.The Study of the Deposition of SiO_2 Films with RF Cold Plasma at Atmospheric-pressure;常压射频低温等离子体增强化学气相沉积二氧化硅薄膜的研究
17.Synthesis and Characterization of Carbon Nanotubes by Plasma-enhanced Chemical Vapor Deposition;等离子体增强化学气相沉积制备碳纳米管及其表征
18.One-dimensional Nanomaterials: Plasma and Chemical Vapor-Phase Synthesis and Characterizations;等离子体及化学气相沉积法合成一维纳米材料及性能研究

相关短句/例句

HDP CVD高密度等离子体化学气相淀积(HDP CVD)
1.For its stability and good Gap fill performance, high density plasma chemical vapour deposition (HDP CVD) is widely used in VLSI manufacture.高密度等离子体化学气相淀积(HDP CVD),具有卓越的填孔能力和可靠的电学特性等诸多优点,因此它被广泛应用于超大规模集成电路制造工艺中。
3)plasma chemical vapor deposition等离子体化学气相沉积
1.Influence of discharge current on hot cathode plasma chemical vapor deposition of diamond films;放电电流对热阴极等离子体化学气相沉积金刚石膜影响
2.Effect of plasma chemical vapor deposition parameters on electron property in Ar plasma;等离子体化学气相沉积参量对Ar等离子体电子特性的影响
3.The relation between characteristics of hot cathode glow discharge and diamond film deposition techniques in hot cathode glow discharge plasma chemical vapor deposition process was discussed.研究了在热阴极辉光放电等离子体化学气相沉积金刚石膜过程中,热阴极辉光放电特性与金刚石膜沉积工艺的关系。
4)PCVD等离子体化学气相沉积
1.DEPOSITION THEORY OF THIN HARD PCVD COATINGS;等离子体化学气相沉积(PCVD)硬质膜成膜理论
2.Si B N composite films had been prepared at proper processing parameters by RF PCVD.使用工业射频等离子体化学气相沉积 (RF -PCVD)设备 ,通过控制合理的工艺参数 ,在不同的基体负偏压下 ,分别制备出了Si B N非晶以及含有h BN、c BN显著结晶相的Si B N复合薄膜。
3.SnO 2 Sb thin film is prepared with PCVD The film possesses better gas sensitivity When temperature rises, the response time maintains almost the same but the recovery time reduces and the sensibility gets higher When the temperature reaches 200℃ or more, the sensitivity maintains stable The difference between the sensibility of the resistors of different resistance is small (4 refs利用等离子体化学气相沉积法制备了ＳｎＯ２－Ｓｂ导电薄膜，测试了ＳｎＯ２－Ｓｂ的气敏效应。
5)Plasma CVD等离子体化学气相沉积
6)PECVD等离子体化学气相沉积
1.Study on device of magneto-active PECVD;磁激活增强等离子体化学气相沉积设备的研制