1)MBE[英][,em bi: 'i:][美]['?m 'bi 'i]分子束外延生长
英文短句/例句
1.Preliminary Study on the Growth of AIN Thin Film by Molecular Beam Epitaxy;分子束外延生长AIN薄膜的初步研究
2.Epitaxial Growth of AlInGaN Quaternary Alloys by RF-MBE射频分子束外延生长AlInGaN四元合金
3.MBE Growth of InP Based PHEMT Epitaxial Materials;分子束外延生长InP基赝配高电子迁移率晶体管外延材料
4.The InSb Epitaxial Growth on GaAs Substrate by Molecular Beam Epitaxy and Its Structure and Properties;GaAs基InSb薄膜的分子束外延生长及其结构与性能
5.A Study of In Situ Annealing of MBE Growth Hg1-_xCd_xTe分子束外延生长Hg1-_xCd_xTe材料原位退火研究
6.Epitaxial and Physical Properties of ZnO-based Diluted Magnetic Semiconductors Grown by Molecular Beam Epitaxy;ZnO基稀磁半导体单晶薄膜的分子束外延生长以及性能研究
7.Effect of Reconstructures on Molecular Beam Epitaxial Growth of GaAs;表面再构对GaAs分子束外延薄膜生长的影响
8.Effects of Substrate Temperature and Growth Rate on Molecular Beam Epitaxial Growth of In_(0.2)Ga_(0.8)As衬底温度和生长速率对In_(0.2)Ga_(0.8)As分子束外延薄膜生长影响
9.GSMBE Growth and Characterization of Fundamental and QCL Materials;气态源分子束外延材料生长及特性和量子级联激光器材料生长研究
10.Structural Study of Molecular Beam Epitaxial Grown Gd_2O_3 and Nd_2O_3 High-k Nano-thick Film分子束外延Gd_2O_3、Nd_2O_3高介电纳米薄膜的结构研究
11.Magnetic and electrical properties of Fe_3O_4 thin films on MgO(100) substrates by laser molecular beam epitaxyFe_3O_4/MgO(100)薄膜的激光分子束外延与磁电学性能
12.The Study on the Properties of CdTe Buffer Layer for MBE HgCdTe Epilayer分子束外延HgCdTe薄膜的CdTe缓冲层特性研究
13.FABRICATION AND CRYSTALLINITY OF Bi_2Sr_2CaCu_2O_(8+δ)THIN FILMS BY MOLECULAR BEAM EPITAXYBi_2Sr_2CaCu_2O_(8+δ)薄膜的分子束外延法制备及结晶性
14.Study on Energetic Deposition and Heteroepitaxial Behavior by Moleculer Dynamics Simulation;载能沉积过程与异质外延生长行为的分子动力学模拟研究
15.Study on Heteroepitaxial Growth of Au/Cu,Ag/Cu and Cu/Au System by Molecular Dynamics Dynamics Simulation;Au/Cu、Ag/Cu及Cu/Au体系异质外延生长的分子动力学研究
16.Epitaxial Growth of Core-Shell ZSM-5/Silicalite-1 with Shape Selectivity外延生长法合成择形功能的核壳ZSM-5/Silicalite-1分子筛
17.The MOCVD Growth Research on AlGaN Epitaxial Layer with High-Al Concentration高Al组分的AlGaN外延材料的MOCVD生长研究
18.MBE GROWN ANTIMONIDE MID-INFRARED LASERS AND PHOTODETECTORS用分子束外延制备红外锑化物激光器和探测器材料
相关短句/例句
MBE growth at low temperature低温分子束外延生长
3)the molecular-beam epitaxy growth equation分子束外延生长方程
4)atomic hydrogen assisted molecular beam epitaxy原子氢辅助分子束外延生长
5)electron beam epitaxy (EBE)电子束外延生长[技术]
6)MBE[英][,em bi: 'i:][美]['?m 'bi 'i]分子束外延
1.PHOTOLUMINESCENCE STUDY ON MBE LOW TEMPERATURE GROWN GaAs;低温下分子束外延生长GaAs的光致发光研究
2.Studies of MBE-Grown ZnS_xSe_(1-x) Films for Liquid-Crystal-Light-Valve;分子束外延生长液晶光阀用ZnS_xSe_(1-x)薄膜的研究
3.The Study of HgCdTe on Si by MBE;Si基大面积碲镉汞分子束外延研究
延伸阅读
分子束外延（molecularbeamepitaxy(MBE)）分子束外延（molecularbeamepitaxy(MBE)）分子束外延是一种超高真空条件下的物理气相淀积方法。其工作原理是在超高真空系统中，使分子或原子束连续不断地撞击到被加热的衬底表面上而获得均匀外延层。在分子束外延过程中，各种成分的束强度可以分别控制。分子束外延的特点是生长速率相当低，典型的为0.1～0.2μm/h，因而能精细控制生长层的厚度，可以生长极薄的外延层。
