金属有机化合物化学气相沉积,MOCVD
1)MOCVD金属有机化合物化学气相沉积
1.Ir/C cluster films were prepared by MOCVD(metal-organic chemical vapor deposition) on quartz plate substrates using iridium-acetylacetonate as the precursor.以乙酰丙酮铱为前驱体,采用金属有机化合物化学气相沉积(MOCVD)技术在石英片上沉积了Ir/C簇膜。
英文短句/例句

1.Iridium Film Prepared by Metal-Organic Chemical Vapor Deposition金属有机化合物化学气相沉积法制备铱薄膜的研究
2.Synthesis and Characterization of Novel Copper(Ⅰ)Complexes as Precursors for Metal-Organic Chemical Vapor Deposition;Cu(Ⅰ)金属有机化学气相沉积前驱物的合成与表征
3.The triangular pits eliminate of (110) a-plane GaN growth by metal-orgamic chemical vapor deposition金属有机物化学气相沉积生长的a(110)面GaN三角坑缺陷的消除研究
4.Research on Preparing Yttria Coatings by Metalorganic Chemical Vapor Deposition;金属有机化学气相沉积法制备氧化钇涂层的探索研究
5.Growth of ZnO Films on Different Substrates by Metal Organic Chemical Vapor Deposition不同衬底上氧化锌薄膜的金属有机化学气相沉积方法生长(英文)
6.The Praparation and Chemical Mechanism of Functional Graded Materials Using Metal Organic Chemistry Vapour Deposition;金属有机化学气相沉积法制备功能梯度材料的方法和机理的研究
7.Metal Organic Chemical Vapor Deposition( MOCVD) is a key technology in growing thin-films.金属有机化学气相沉积(OCVD)一门制备薄膜材料的关键技术。
8.A New Preparation Technology of Mica Pearlescent Pigment by Metal Organic Chemistry Vapour Deposition (MOCVD) and Their Application;金属有机化学气相沉积(MOCVD)法制备云母珠光颜料新工艺及应用研究
9.metallo organic chemical vapor deposition有机金属化学汽相淀积
10.Morphology and defect of a-GaN grown by metal orgamic chemical vapor deposition利用金属有机物化学气相沉积技术生长的a面GaN表面形貌和位错的研究
11.Simulation and optimization design in MOCVD reactor金属有机化学气相沉淀反应器结构的模拟优化
12.Fluorides CVD Methods for Refractory Metal In CIS Countries (Ⅰ)独联体国家的难熔金属氟化物化学气相沉积技术(上)
13.thermochemistry of organometallic compounds有机金属化合物热化学
14.chemistry of organometallic compound有机金属化合物化学
15.Carbon nanotube reinforced metal matrix composites fabricated by in-situ chemical vapor deposition原位化学气相沉积法制备碳纳米管增强金属基复合材料
16.Chemical Bath Depositon for Metal Chalcogenide Photoelectric Functional Thin Films;化学浴沉积制备金属硫族化合物光电功能薄膜
17.Solubility of Metal Oganic Compound in Supercritical Carbon Dioxide and Its Supercritical Fluid Deposition;金属有机化合物在超临界CO_2中的溶解与沉积研究
18.thermally activated chemical vapour deposition热活化化学气相沉积
相关短句/例句

MOCVD金属有机化学气相沉积
1.The Influential Factors of MOCVD Growth of InP in Opals;金属有机化学气相沉积法在欧泊空隙中生长磷化铟的影响因素
2.Latest progress on preparation of ferroelectric thin films prepared by MOCVD process;金属有机化学气相沉积制备铁电薄膜材料研究进展
3.The deposition process was carried out in nitrogen by atmospheric pressure metal-organic chemical vapor deposition(MOCVD) with aluminum-tri-sec-butoxide(ATSB) as the precursor.以仲丁醇铝(ATSB)为前驱物、氮气为载气,用金属有机化学气相沉积法(MOCVD)在HP40钢表面沉积了Al2O3薄膜。
3)MOCVD有机金属化学气相沉积
1.Effect of Growth Cycle on SiO_2-InP Fabricated by MOCVD;生长周期对有机金属化学气相沉积法制备SiO_2-InP光子晶体的影响
4)Metalorganic chemical vapor deposition金属有机化学气相沉积
1.Phosphorus-doped p-type ZnO thin films are prepared on glass substrates by metalorganic chemical vapor deposition.利用金属有机化学气相沉积方法在玻璃衬底上生长了掺磷的p型ZnO薄膜。
2.p-type zinc oxide (ZnO) thin films are grown by plasma-assisted metalorganic chemical vapor deposition (MOCVD).在n型ZnO体单晶片上,首次采用N等离子体辅助金属有机化学气相沉积方法外延生长了p型ZnO薄膜,制成了同质ZnO的发光二极管(LED)原型器件;在室温下,观察到同质ZnO的LED施加电压后由电注入激发出紫外至绿光波段的光谱。
5)metal-organic chemical vapor deposition金属有机化学气相沉积
1.High quality ZnO films are successfully grown on Si(100) substrates by metal-organic chemical vapor deposition at 300℃.采用金属有机化学气相沉积方法,在Si(100)衬底上生长出具有高度C轴择优取向的ZnO薄膜。
2.The ZnO films, grown on sapphire or silicon substrates, have been investigated by several methods such as Molecular Beam Epitaxy, Sputtering, and metal-organic chemical vapor deposition (MOCVD) and so on.生长ZnO薄膜材料的方法很多,包括分子束外延(MBE)、金属有机化学气相沉积(MOCVD)、脉冲激光沉积(PLD)、原子层外延、磁控溅射和蒸发等其中MBE、MOCVD和PLD等方法生长的ZnO薄膜质量较高。
6)Plasma enhanced metal-organic chemical vapour deposition等离子体增强金属有机化合物化学气相沉积
延伸阅读

金属有机化合物化学气相沉积分子式:CAS号:性质:用金属有机化合物热分解进行气相外延生长的方法。其基本原理是将含有外延材料组分的金属有机化合物气体通过载气输送到反应室,在一定温度下进行外延生长。MOCVD技术主要应用于III-V族II-VI族化合物半导体超晶格量子阱等低维材料生长和多元固溶体的多层异质结构材料的生长,还可用于制备高温超导薄膜,铁电薄膜,传感器薄膜,太阳能电池薄膜及其他金属薄膜。该技术工艺可控,操作简便及适用于大规模生产等优点。其缺点是所用源材料为易燃剧毒物质。