1)Y3+-dopingY掺杂
英文短句/例句
1.Calculation of the electronic structure of Y-doped SrTiO_3Y掺杂SrTiO_3晶体材料的电子结构计算
2.Preparation and Performance of Sm Doped CeO_2 and Y Doped BaCeO_3 Composite Electrolyte MaterialsSm掺杂CeO_2与Y掺杂BaCeO_3复合电解质材料的制备和性能研究
3.Influence of Y Doped Ba(Sn_(0.1)Ti_(0.9))O_3 Ceramic Physical Performence;Y掺杂对Ba（Sn_（0.1）Ti_（0.9））O_3陶瓷物理性能的影响
4.Study of Electrochemical Properties of Ti/SnO_2+MnO_x/PbO_2 Electrode Doped with Rare Earth Y稀土Y掺杂Ti/SnO_2+MnO_x/PbO_2电极的电化学性能研究
5.Preparation and Performance of Y-Doped Amorphous Nano-Sized Ni(OH)_2稀土Y掺杂非晶态纳米Ni(OH)_2的结构及其电化学性能研究
6.Surface Structures and Dielectric Properties of Yttrium-doped Barium Strontium Titanate Films by Improved Sol-Gel method改进Sol-Gel法制备Y掺杂BST薄膜表面结构及介电性能研究
7.Effects of Pb and Y doping in Bi2212 Single Crystals;Bi2212单晶中Pb和Y的掺杂效应
8.Studies on Mixing Ag in the Superconductor of Y-Ba-Cu-O Compound System;Y-Ba-Cu-O系超导体Ag掺杂的研究
9.Up-conversion Investigation in Rare-earth Ions Doped β-NaMF_4(M=Yb, Y) Materials稀土掺杂β-NaMF_4（M=Yb，Y）的上转换研究
10.Effect of Y-doping Technology on Properties of Y-BT Ceramics钇掺杂工艺对Y-BT陶瓷性能的影响
11.Preparation and Characterization of Rare Earth Doping YAG Phosphors and Y-TZP Nanopowder;稀土掺杂YAG荧光粉和Y-TZP纳米粉的制备及表征
12.Study on microstructure and electric properties of Y~(3+)-doped ZnO varistor ceramicsY~(3+)掺杂ZnO压敏陶瓷的微结构和电性能研究
13.Preparation of Nitrogen-doped TiO_2 Sensitized by Eosin Y and Performance of Photocatalytic Hydrogen Evolution under Visible Light Irradiation;伊红-Y敏化氮掺杂TiO_2的制备及其可见光下光催化制氢性能
14.The Structure and Electrochemical Properties of AB_5-type Hydrogen Storage Alloys Doped with Y/MgY/Mg掺杂AB_5型贮氢电极合金的结构与电化学性能研究
15.Characterization and Photocatalytic Properties of Y~(3+) Doped TiO_2 NanoparticlesY~(3+)掺杂纳米TiO_2粉体的表征及光催化性能研究(英文)
16.A substance that adulterates.掺杂物掺有杂质的物质
17.Study on the Preparation and Properties of Doped and Co-Doped TiO_2掺杂及共掺杂TiO_2的制备及其性能研究
18.Research on Yb~(3+) doping mechanism of ytterbium-doped fiber掺镱石英光纤中Yb~(3+)掺杂机理的研究
相关短句/例句
doping Y and GdY和Gd掺杂
3)Pb and Y dopingPb和Y掺杂
1.We have successfully fabricated Pb and Y doping Bi2212 single crystals using self - flux solid state reaction method.采用自助溶剂固态反应法制备出Bi2212及其Pb和Y掺杂单晶。
4)Y adding稀土Y掺杂
5)sulphur-yttrium co-dopingS-Y复合掺杂
6)Y-doped BaTiO3 ceramicsY掺杂BaTiO3陶瓷
1.Effects of BaO-B2O3-SiO2 glass additive on microstructures and PTCR characteristics of Y-doped BaTiO3 ceramics are investigated.研究了氧化钡-氧化硼-氧化硅(BaO-B2O3-SiO2)玻璃助剂对Y掺杂BaTiO3陶瓷微观结构和PTCR特性的影响。
延伸阅读
半导体材料掺杂半导体材料掺杂doping for semiconductor material bondootl Col}{00 ehonzo半导体材料掺杂(doping for semiconduCtormaterial)对材料掺入特定的杂质以取得预期的物理性能与参数的半导体材料制备方法，在大多数情况下，是使用掺杂后的半导体材料进行器件制备。掺杂的具体目的有:(l)获得预期的导电类型，如p型掺杂或n型(见半导体材料导电机理)掺杂;(2)获得预期的电阻率、载流子浓度(见半导体材料导电机理)，如重掺单晶(见简并半导体)、半绝缘砷化稼的制备;(3)获得低的少子寿命(见半导体材料导电机理)，如锗中掺金;(4)获得晶体的良好力学性能，如硅中掺氮;(5)提高发光效率，改变发光波长，如磷化稼中掺氮、掺氧(见发光用半导体材料);(6)形成低维材料及超晶格(见半导体超晶格);(7)调整晶格匹配，如硅中掺锡。 对掺杂的要求主要是:精度、均匀性、分布空间。掺杂的方法有熔体掺杂、气相掺杂、中子擅变掺杂、离子注入掺杂、表面涂覆掺杂(见区熔硅单晶)。掺杂是在半导体材料制备过程的某一个或几个工序中进行，大多数是在单晶拉制过程中进行掺杂，薄膜材料则在薄膜制备过程中进行掺杂，而中子擅变掺杂、离子注入掺杂则离开晶体制备而成为独立的工序。 (万群)
