1)C dopingC掺杂
1.Effect of nanoscale C and SiC doping on the superconducting properties of MgB_2 tapes;纳米C和SiC掺杂对MgB_2带材超导性能的影响
英文短句/例句
1.Photoelectrical Performance of TiO_2 Doped with Nitrogen or Carbon;N或C掺杂TiO_2光电化学特性研究
2.Low Temperature Preparation of Mesoporous Carbon-Doped Crystalline TiO_2 and Its Characterization;介孔C掺杂二氧化钛光催化剂的低温制备及表征
3.Structure and electrochemical performance of Mg~(2+) doped LiFePO_4/CMg~(2+)掺杂LiFePO_4/C的结构及电化学性能
4.Effect of Doping with Rare Earth on Electro-Catalytic Performance of Pt-Ru/C Catalyst;稀土元素掺杂对Pt-Ru/C电催化性能的影响
5.The Effect of BN Doping and Interstitialing Atom on the Structure and Physical Properties of C and La_(0.7)Ca_(0.3)MnO_3;BN掺杂和填隙对C和LCMO的结构、物性的影响
6.Synthesis and performance of high tap density LiFePO_4 cathode materials doped with copper ionsCu~(2+)掺杂高密度LiFePO_4/C正极材料的合成及性能
7.Preparation and Photocatalytic Hydrogen Evolution Performance of C-N Co-doped Nano TiO_2 PhotocatalystsC-N共掺杂纳米TiO_2的制备及其光催化制氢活性
8.Effect of Sr-doping for the electro-oxidation of methanol on Pt-CeO_2/C catalystSr掺杂对Pt-CeO_2/C电催化甲醇性能的影响
9.Electro-oxidation of Methanol on Fe-doped Pt-ZrO_2/C Catalyst甲醇在铁掺杂Pt-ZrO_2/C催化剂上的电氧化
10.A substance that adulterates.掺杂物掺有杂质的物质
11.Performance of Pt/C Doped with Ni, Co, Fe, Mo, W for Oxygen Electro-Redution in Alkaline Media;Ni，Co，Fe，Mo，W掺杂的Pt/C在碱性介质中电催化氧还原的性能研究
12.Effect of Rt-Ru/C Doping with W、Ni and Sn for Methanol Electro-Calalytic Oxidation in Alkaline Media;碱性条件下W、Ni和Sn掺杂对Rt-Ru/C电催化氧化甲醇的影响
13.Self-propagating High-temperature Synthesis (SHS) Method MgB_2 Superconductor and SiC, C Doping Phase Transition Process自蔓延法制备MgB_2超导体及其掺杂SiC，C的相变过程研究
14.Research on the Synthesis and Electrochemical Performances of Rare Earth Ions Doped LiFePO_4/C Used as Cathode Materials稀土离子掺杂LiFePO_4/C正极材料的合成及其电化学性能的研究
15.Electronic Properties of Codoped Spinel Silicon Nitride with C and As by DFT MethodC和As共掺杂的γ-Si_3N_4电子性质的密度泛函理论研究
16.PREPARATION AND VISIBLE-LIGHT-INDUCED PHOTOCATALYTIC ACTIVITY OF C,N,S-TRIDOPED TITANIUM DIOXIDE POWDERSC,N,S-掺杂二氧化钛粉体的制备及其可见光光催化性能
17.Performance of Pt/C Doped with Ni for Oxygen Electro-Reduction in Alkaline MediaNi掺杂的Pt/C碱性条件下电催化氧还原性能(英文)
18.Synthesis and Opto-Electronic Properties of the(C~∧N~∧N) Cyclometalated Pt(II) Complexes with Oligofluorene Units化学掺杂寡聚芴单元的(C~∧N~∧N)型环金属化铂配合物的合成及其光电性质
相关短句/例句
carbon dopingC掺杂
1.The mechanism,material property and the effect of carbon doping on the high power laser diodes were analyzed.利用低压金属有机金属化合物汽相淀积方法 ,以液态 CCl4为掺杂源生长了高质量 C掺杂 Ga As/Al Ga As材料 ,并对生长机理、材料特性以及 C掺杂对大功率半导体激光器的影响进行了分析。
3)carbon adulterated掺杂C
4)Carbon doped SiGeC掺杂SiGe
5)C-doped TiO2C掺杂TiO2
1.First-principles calculations were carried out to investigate the energies and defect structures of C-doped TiO2rutile.使用第一性原理方法,计算了C掺杂TiO2材料的缺陷结构与能量,分析了在不同晶体生长环境下C掺杂TiO2晶体中的缺陷稳定性变化规律。
6)C-doped TiO_2C掺杂TiO_2
延伸阅读
半导体材料掺杂半导体材料掺杂doping for semiconductor material bondootl Col}{00 ehonzo半导体材料掺杂(doping for semiconduCtormaterial)对材料掺入特定的杂质以取得预期的物理性能与参数的半导体材料制备方法，在大多数情况下，是使用掺杂后的半导体材料进行器件制备。掺杂的具体目的有:(l)获得预期的导电类型，如p型掺杂或n型(见半导体材料导电机理)掺杂;(2)获得预期的电阻率、载流子浓度(见半导体材料导电机理)，如重掺单晶(见简并半导体)、半绝缘砷化稼的制备;(3)获得低的少子寿命(见半导体材料导电机理)，如锗中掺金;(4)获得晶体的良好力学性能，如硅中掺氮;(5)提高发光效率，改变发光波长，如磷化稼中掺氮、掺氧(见发光用半导体材料);(6)形成低维材料及超晶格(见半导体超晶格);(7)调整晶格匹配，如硅中掺锡。 对掺杂的要求主要是:精度、均匀性、分布空间。掺杂的方法有熔体掺杂、气相掺杂、中子擅变掺杂、离子注入掺杂、表面涂覆掺杂(见区熔硅单晶)。掺杂是在半导体材料制备过程的某一个或几个工序中进行，大多数是在单晶拉制过程中进行掺杂，薄膜材料则在薄膜制备过程中进行掺杂，而中子擅变掺杂、离子注入掺杂则离开晶体制备而成为独立的工序。 (万群)
