1)Earth-continuity接地导通电阻
1.Research on Calibration of Earth-continuity;接地导通电阻校准方法的研究
2)Earth-continuity tester接地导通电阻测试仪
3)specific on-resistance导通电阻
1.This structure is suitable for breakdown voltage below 300V to obtain ultra-low specific on-resistance.在低于300V击穿电压条件下这种结构使VDMOS具有超低的比导通电阻。
2.The electrical field peaks and the specific on-resistance have been discussed in details.研究了常规LEDM O S,带有两块多晶硅场极板LEDM O S以及带有两块多晶硅场极板和一块铝场极板的LEDM O S表面电场分布情况,重点研究了多块场极板在不同的外加电压下,三种LEDM O S的表面峰值电场和导通电阻的变化情况。
3.8%,and the specific on-resistance is reduced by 87.用半导体专业软件Tsuprem4和Medici模拟证明了该模型十分有效,根据该模型优化得到的新型LDMOS的击穿电压和导通电阻分别比常规LD MOS增加58。
英文短句/例句
1.Temperature Dependence of On-state Resistance of A High Voltage LDMOS at Very High Temperatures;高压LDMOS导通电阻的高温特性
2.Physical Model of Specific On-Resistance of Strip-Gate VUMOSFET条形栅VUMOSFET特征导通电阻的物理模型
3.A thin wire has a higher resistance than a thick one. It tries to stop the flow of current. Then it gets very hot.细导线的电阻比粗导线的电阻大，它阻碍电流通过，因此变得很热。
4.The earth provides a low resistance conducting path for direct cur-rent.大地提供了低电阻直流导电通道。
5.Electrical impedance or admittance.导抗电阻抗或电导纳
6.a unit of electrical resistance equal to the resistance between two points on a conductor when a potential difference of one volt between them produces a current of one ampere.电阻单位导体电压是一伏特通过电流是一安培时导体的电阻是一欧姆。
7.The derivation of the general expression of input resistance in negative feedback amplifier;负反馈放大器输入电阻计算通式的推导
8.An insulator is a poor conductor because it has a high resistance to such flow.绝缘体是不良导体,因为它是对电流的通过呈高电阻的物质。
9.a unit of potential equal to the potential difference between two points on a conductor carrying a current of 1 ampere when the power dissipated between the two points is 1 watt; equivalent to the potential difference across a resistance of 1 ohm when 1 ampere of current flows through it.电压单位等于安培的电流通过电阻为欧姆的导线时导线两端的电压是伏特。
10.The more common electrical properties include electrical resistivity and conductivity, and the relative dielectric constant, which relates the accumulated charge across an insulator to the electric field.通常的电性能有电阻率和电导率,相对介电常数,即绝缘体的蓄电荷与电场的关系。
11.A low resistance electrical connection between conducting structures such as racks and metal cable sheaths, made in order to keep them at the same potential, usually that of the earth.导电构件间的一种低阻电连接,如机箱和金属电缆壳之间,以使其保持相同电位,通常为大地电位。
12.organic semiconductor thermistor有机半导体热敏电阻器
13.The longer a wire is, the greater is its resistance .导线越长，其电阻越大。
14.rail bond resistance tester钢轨导接线电阻测试器
15.The thicker is the wire, the smaller is the resistance .导线越粗，电阻越校
16.The best conductor has the least resistance and the poorest the greatest.最好的导体电阻最小，最差的导体电阻最大。
17.electronic countermeasure resistant communication system电子对抗阻力通信系统
18.Cardiac Biological Accessory Atrioventricular Pathways Restored by Autologous Transplantion and Committed Differentiation of Bone Marrow Mesenchymal Stem Cells;自体骨髓间质干细胞诱导分化移植构建房室间电传递新通道治疗房室传导阻滞的初步研究
相关短句/例句
Earth-continuity tester接地导通电阻测试仪
3)specific on-resistance导通电阻
1.This structure is suitable for breakdown voltage below 300V to obtain ultra-low specific on-resistance.在低于300V击穿电压条件下这种结构使VDMOS具有超低的比导通电阻。
2.The electrical field peaks and the specific on-resistance have been discussed in details.研究了常规LEDM O S,带有两块多晶硅场极板LEDM O S以及带有两块多晶硅场极板和一块铝场极板的LEDM O S表面电场分布情况,重点研究了多块场极板在不同的外加电压下,三种LEDM O S的表面峰值电场和导通电阻的变化情况。
3.8%,and the specific on-resistance is reduced by 87.用半导体专业软件Tsuprem4和Medici模拟证明了该模型十分有效,根据该模型优化得到的新型LDMOS的击穿电压和导通电阻分别比常规LD MOS增加58。
4)On-Resistance导通电阻
1.In this paper,the working principle of VDMOSFET and the composition of on-resistance are described.介绍了VDMOSFET工作原理和VDMOSFET导通电阻的组成。
2.To overcome the trade-off relationship between the on-resistance and breakdown-voltage of conventional MOS power devices,a new device concept called as "superjunction" or "CoolMOS" has been proposed.为了克服传统功率MOS导通电阻与击穿电压之间的矛盾,提出了一种新的理想器件结构,称为超级结器件或CoolMOS,CoolMOS由一系列的P型和N型半导体薄层交替排列组成。
3.By using basic physical equation of semiconductor,such as Poisson equation,a new method to establish an exact on-resistance model based on the physical structure of VDMOS device was given.导通电阻是衡量VDMOS器件性能的重要参数之一,是高开关效率,低功耗VDMOS器件的主要设计指标。
5)on-state resistance导通电阻
1.Compared to VDMOS under the same condition,the on-state resistance is reduced by 19%-43%.8S、阈值电压2~3V、导通电阻比同样条件的VDMOS降低了19%~43%,在175MHz、VDS=12V下输出功率PO为7W、漏极效率ηD为44%、功率增益GP为10dB。
2.A conventional RESURF LDMOS could not be possessed of a high off-state breakdown voltage while achieving a low on-state resistance.RESURF LDM O S很难兼顾击穿电压和导通电阻对结构的要求。
3.The effects of wideness P w and P T on special on-state resistance R onA are discussed in detail.介绍了功率VDMOSFET导通电阻的模型,重点讨论了PW与PT对特征导通电阻RonA的影响,经过大量的理论计算,给出了击穿电压为500V,TOX与RonA的关系曲线。
6)on state resistance导通电阻
1.The effects of thickness T ox of gate (SiO 2) on special on state resistance are discussed in detail.介绍了功率VDMOSFET导通电阻的模型 ,重点讨论了栅SiO2 厚度Tox对特征导通电阻RonA的影响 ,经过大量的理论计算 ,给出了击穿电压为 2 0V时VDMOSFET的Tox与RonA的关系曲线 。
2.The test data are not accorded with the classical formula, theory analysis show that the errors mainly originate from the on state resistance R ON of the MOSFET inner 555 during discharge.由经典公式计算得出的占空比与实测数据存在差异 ,其原因主要在于 5 5 5内部放电用MOS管导通电阻的存在。
延伸阅读
电力系统中性点电阻器接地电力系统中性点电阻器接地resistance grounded of electric power system d lanllx一tong zhongx一ngd旧nd旧nzuqll旧d-电力系统中性点电阻器接地(r esistancegrounded of ele亡trie power system)电力系统中至少有一个中性点接人电阻器与大地连接，目的是限制接地故障电流。中性点经电阻器接地可以直接消除不接地系统的两个严重缺点，即能减少弧光接地过电压的危险性，并使灵敏而有选择性的接地保护得以实现。另一方面，由于这种系统的接地电流比直接接地系统的小，对邻近通信线路的干扰也较弱。 单从降低弧光过电压角度来看，电阻器阻值凡满足Re、扁(。是系统的每相对地分布电容，就可以了.弧光接地时，在电弧点燃熄灭过程中，系统积累多余的电荷，使振荡过程加剧，从而产生很高的过电压。若能使这些电荷在从电弧熄灭到重燃前的一段时间(半个工频周期)内通过中性点电阻器泄漏掉，过电压就能降低。当R。)1。森时，电弧接地引起的瞬态过二““一’，。司’一七一‘一3创(，’J’一。夕阮~~J’~HJ~J即~程与中性点不接地系统没有多大区别，而当Re(今~切’一‘”、一’~~，、，“~「刁~/、~月J”，叼~一e~记试了时，过电压就小得多了。因为线路对地电容向R。放电遵循f“放电规律，当满足尺簇东时，放电时间常~v口“~~尹柑厅’司’门~‘.f~以了“砚’~毛”J「，甲数T一3R￡一立一息，当‘为半个工频周期‘-钻‘一“’、叫。一2汀’闷’/JT’一州产，川’一弄时，线路上的电荷由1降至e一号一。.35。这说明Zf“切’城耳J-“;吧1”因几汗二“一二t，口“趋肠们电荷大部分(约2/3)泄漏掉，因而不会再产生很高的振荡过电压，在规模不大的架空线路系统中接人这种电阻器后，接地电流仍然不大，仍未破坏接地电弧自行熄灭的条件。这样，此种称为高值电阻器接地的系统就可以保持不接地系统(发生接地故障但不跳闸)的优点，同时又解决了弧光接地过电压的问题。 为了获得快速选择性继电保护所需的足够电流，就必须降低电阻器的电阻值。但电流越大，电阻器功率越大，设备将很笨重;同时电流太大，又将有与直接地系统类似的缺点。根据运行经验，一般采用接地故障电流入为100~1000A。阻值再小就不如用电扰器有效.有的国家是把If控制在变压器额定电流的水平。使用这种阻值较低的电阻器接地系统既消除了弧光接地过电压，又使不接地系统经常出现的由电磁式电压互感器引起的铁磁谐振不再发生。当系统规模较大，特别是有重要的用户时，因为这些用户常有备用线路.要求故障线路迅速切除，故可选用这种接地方式. 根据以上考虑的中性点电阻器接地系统都不是有效接地系统。这种系统中的变压器不能采用分级绝缘(即中性点需采用全绝缘)。 以上两种高值和较低值电阻器接地方式适用于不同情况的配电系统，它们具有不接地或直接接地方式的某些优点，也多少存在两种接地方式的某些缺点。 对于发电机中性点电阻器接地方式还有些特殊考虑.为了避免发电机在发生绕组接地故障时将铁芯烧坏，要求使单相接地电流减小到比loA更小。
