CMOS工艺,CMOS technology英语短句,例句大全

CMOS工艺,CMOS technology
1)CMOS technologyCMOS工艺
1.Low phase noise LC VCO design in CMOS technology;CMOS工艺的低相位噪声LC VCO设计(英文)
2.18 μm CMOS technology.18μm CMOS工艺实现的2。
3.6μm CMOS technology.6μm CMOS工艺设计了一种用于光纤通信的跨阻前置放大器。

英文短句/例句

1.0.18μm CMOS Power Amplifier for 5.25GHz Wireless LAN Systems;0.18μm CMOS工艺5.25GHz WLAN功率放大器的设计
2.Design of PLL Frequency Synthesizer Based on CMOS Techniques;基于CMOS工艺的锁相环频率合成器设计
3.Research and Design of 10-bit SAR ADC Based on CMOS Technology;基于CMOS工艺的10位SAR ADC的研究与设计
4.Design of an On-chip Chaotic A/D Converter Fabricated 0.6um CMOS Process;0.6um CMOS工艺混沌A/D转换器的设计
5.622MHz Charge Pump PLL Design of Basing on CMOS Technics;基于CMOS工艺的622MHz电荷泵锁相环设计
6.Design of a 5GHz VCO with 0.25um CMOS Technology;一种采用0.25um CMOS工艺设计的5GHz VCO
7.Research of Capacitive Humidity Sensor Compatible with CMOS Technology;基于CMOS工艺的电容型湿度传感器研究
8.The Research of High Voltage MOSFET Based on CMOS Process;基于CMOS工艺的高压MOSFET的研究
9.High-Voltage MOSFETs Based on CMOS Processes;基于CMOS工艺的高压MOSFET研究
10.Design of Low Voltage Multistage Amplifiers Based on 0.5μm CMOS Technology;基于0.5μm CMOS工艺低压多级放大器设计
11.The Research of Low Drop-out Linear Regulator Based on CMOS Technology基于CMOS工艺的低压差线性稳压器研究
12.A Design of Charge-Pump Phase Lock Loop Based on CMOS Technics基于CMOS工艺的电荷泵锁相环的设计
13.Design of 622MHz CPPLL Based on 0.18μm CMOS Technology0.18μm CMOS工艺622MHz电荷泵锁相环设计
14.An Ultra High-speed Comparator in 0.18μm CMOS基于0.18μm CMOS工艺的超高速比较器的设计
15.Design of 65nm-technology-based CMOS 10GHz Carry Look-ahead Adder基于65nm CMOS工艺10GHz超前进位加法器设计
16.An Improved Current-Inpouring Mixer Based on CMOS Technology基于CMOS工艺的改进型电流注入混频器
17.Analysis and design of novel ESD protection circuit in 0.18μm CMOS process0.18μm CMOS工艺下的新型ESD保护电路设计
18.A Multi-Standard RF Filter in 0.18 μm CMOS Technology基于0.18μm CMOS工艺的多标准射频滤波器

相关短句/例句

CMOS processCMOS工艺
1.Design of folded-cascode operational amplifier with 0.6μm CMOS process;0.6μm CMOS工艺折叠共源共栅运算放大器设计
2.Design of on-chip transmission line in CMOS process;CMOS工艺片上传输线研究
3.Property of polyimide capacitive type humidity sensor prepared by CMOS processCMOS工艺制备聚酰亚胺电容型湿度传感器及其性能
3)CMOSCMOS工艺
1.10 Gb/s 0.18μm CMOS4∶1 Multiplexer;10 Gb/s 0.18μm CMOS工艺复接器设计
2.6μm CMOS technology.采用CSMC0·6μmCMOS工艺设计实现了低压、低功耗的多级运算跨导放大器。
3.The present status of power amplifier in CMOS process is discussed,and its potential applications in RFID technology are summarized in the paper.针对国内外射频识别技术的迅猛发展,结合射频识别技术的应用背景,阐述了读写器中最大的耗能器件—功率放大器的研究现状;指出CMOS工艺应用于功率放大器设计的局限性和可行性;最后,探讨了将CMOS功率放大器应用于射频识别技术的主要研究方向。
4)0.5μm CMOS process0.5μm CMOS工艺
5)0.18μm CMOS technology0.18μm CMOS工艺
6)CMOS MEMSCMOS MEMS工艺
1.As the improvement of the CMOS MEMS process, people are putting more efforts on the sensors on chip, which have the virtue of small volume, low power, and high sensitivity, cheap, portable.随着CMOS MEMS工艺的进步，人们努力尝试采用这种工艺来制作传感器，这种传感器体积小、功耗低、灵敏度高、携带方便；而且可以批量生产降低成本。