1)grain boundary migration晶界迁移
1.The results showed that a compressive strain parallel to the grain boundary enhanced the grain boundary migration,which is driven by the interaction between neighboring grain boundaries.结果表明:平行于晶界方向的压应变可以促进晶界在相邻晶界交互作用下发生迁移;垂直于晶界方向的压应变则不能对晶界迁移产生明显的效果。
2.The fine phase of Mg_(12)Ce can apparently elevate recrystallization temperature by means of preventing the grain boundary migration,and improve the room and elevate temperature properties.对Mg-Ce-Zn-Zr合金的显微组织进行了观察研究,通过XRD分析、光学显微(OM)分析、扫描电子显微镜(SEM)分析表明:Mg12Ce及Mg17Ce2相铸态时主要存在于晶界,存在于晶界的稀士相Mg12Ce能显著提高合金的再结晶温度,阻碍晶界迁移。
3.The grain boundary migration during recrystallization in IC 218 alloy was studied by means of TEM and ODF.采用 TEM和 ODF(取向分布函数 )等手段对 IC- 2 18合金再结晶过程中的晶界迁移行为进行了研究 ,发现小角晶界的活动相当活跃 ,而一般大角晶界失去了明显可动性。
英文短句/例句
1.GRAIN BOUNDARY MIGRATION IN RECRYSTALLIZED ARMCO IRON DURING GRAIN GROWTHα-铁素体晶粒长大过程中的晶界迁移
2.Grain boundary migration in recrystallised Armco iron during grain growth has been studied by vacuum etching method.本文叙述用真空热侵蚀方法研究α-铁再结晶后,晶粒长大晶界迁移的一些结果.
3.high electron mobility transistor高电子迁移率晶体管
4.Thermal Residual Stress Field Redistribution, Grain Boundary Void Growth and Electromigration-induced Inclusion Drift in a Bamboo Interconnect;竹节导线中热残余应力场和晶界孔洞的演化及电迁移引致的夹杂漂移
5.A Study on the Modeling of AlGaN/GaN High Electron Mobility Transistors;AlGaN/GaN高电子迁移率晶体管的模型研究
6.Photocarrier Transport in Potassium Lithium Tantalate Niobate Crystal钽铌酸钾锂晶体载流子迁移性能研究
7.A Test Device of the Drift Mobility for Non-Crystal Photoconductive Materials非晶光电导材料漂移迁移率的测试装置
8.Dynamic Programming in the Process of User Interface Migration;界面迁移过程中动态划分问题的研究
9.The intensive research on definition and statistical caliber of population migration;再论人口“迁移”的概念与统计口径界定
10.On Classification of Permanent and Temporary Migration of Population in China;中国人口迁移和人口流动的分类界定
11.The electron is able to travel through the crystal as easily as through a metal.这个电子像穿过金属一样很容易在晶体中迁移。
12.Field Aided Lateral Crystallization of Amorphous Silicon Induced by Ni and Its Eletromigration Effect电场增强Ni诱导非晶硅横向结晶及其电迁移效应
13.Research on the Mechanism of the Twin Boundary Motion of Ni-Mn-Ga Single Crystals and the Simulation of Stress-induced Martensitic Transformation;单晶Ni-Mn-Ga孪晶界迁动机制研究及应力诱发马氏体相变模拟
14.The Criticality of the Transport System in a Slab Geometry with Reflecting Boundary Conditions;具反射边界条件的板模型迁移系统的临界性
15.During the World War Ⅱ, there had realized the fundamental transformation of from a state of emigration to immigration.在第二次世界大战中，德国实现并经历了从移民迁出国到移民迁入国的根本变迁。
16.The Interface Thermodynamics Research on Resident Oil Migration during Polymer Flooding Process;聚驱过程中滞留油迁移相界面热力学研究
17.The Research of Transport Equations with General Boundary Conditions in Slab Geometry;板几何中具广义边界条件的迁移方程研究
18.Singular Transport Equations with a Reflecting Boundary Conditions in Slab Geometry;板几何中一类具反射边界条件的奇异迁移方程
相关短句/例句
migration energy for grain boundary晶界迁移能
1.In the model,three parameters,such as migration energy for grain boundary,recrystallization grain size and dislocation density,are included.采用位错理论推导出了一个具有晶界迁移能、再结晶平均晶粒尺寸以及位错密度等材料物理参数再结晶动力学模型。
3)Grain Boundary Mobility晶界迁移率
4)grain boundary migration晶界迁移<冶>
5)directional grain boundary migration晶界定向迁移
6)grain boundary migration晶粒间界迁移
延伸阅读
晶界滑动晶界滑动grain-boundary slip J 1 ngJle huadong晶界滑动(grain一boundary slip)高温下多晶体金属相邻晶粒在切应力作用下沿着晶粒间界的相对移动。高温下多晶体晶粒间界处的结合显著削弱，当受切应力作用时，晶粒发生沿着间界作相对的滑动而变形。晶界滑动速度相当缓慢，只有在蠕变条件下即温度高和应力低的情况下才显得重要。晶粒越小，单位体积内晶界面积越大，晶界滑动的作用就越大，即对总变形量的贡献就越大。作晶界滑动时，通常总需要晶粒内有一定数量的位错运动与扩散塑性变形;因为大多数晶粒形状不规则，为了发生晶界滑动时不产生裂口，晶粒形状必须作相应的变化，位错运动是满足这种要求的主要途径。材料然加工时发生断裂的主要原因是，晶界滑动时在三晶粒交界处造成的应力集中使该处产生楔形裂口(见图)，然后受张应力作用而沿晶界扩展导致断裂。卜卜芳卜升必才 楔形裂口形成示意图 (王祝堂)
