常压化学气相淀积,APCVD英语短句,例句大全

常压化学气相淀积,APCVD
1)APCVD常压化学气相淀积
1.Computer Simulation of Polysilicon Films Prepared by APCVD;常压化学气相淀积多晶硅的计算机模拟
2.Using a SiH4-C3H8-H2 reaction gas system,polycrystal 3C-SiC films have been grown on Si(100) substrates with different porous silicon buffers via atmospheric pressure chemical vapor deposition(APCVD) process.采用SiH4-C3H8-H2气体反应体系,通过常压化学气相淀积(APCVD)工艺在电化学腐蚀的多孔硅衬底上进行了多晶3C-SiC薄膜的生长,研究了多孔硅孔隙率对薄膜生长质量的影响。
2)atmospheric pressure chemical vapor deposition (APCVD)常压化学气相淀积(APCVD)
3)LPCVD低压化学气相淀积
1.Research on Polysilicon Thin Film Technics by LPCVD;低压化学气相淀积多晶硅薄膜工艺研究
2.MOLECULAR DYNAMICS SIMULATION OF THE THICKNESS OF POLYCRYSTALLINE Si MEMBRANE PREPARED BY LPCVD;低压化学气相淀积多晶硅薄膜膜厚的分子动力学模拟
3.The internal stress in silicon-nitride thin films prepared by low-pressure chemical vapor deposition(LPCVD) was studied measured by XP-2 stylus profilometer.研究了低压化学气相淀积SiN(LPCVD)介质薄膜的内应力,采用XP-2型台阶仪测量了SiN介质薄膜的内应力,通过改变薄膜淀积时的工艺参数,观察了反应气体流量比、淀积温度、反应室压力等因素对SiN薄膜内应力的影响。
4)VLP-CVD超低压化学气相淀积
1.Temperature Dependence of Self organized Growth of Ge Quantum Dots on Si Substrate by VLP-CVD;对利用超低压化学气相淀积 (VLP CVD)技术在Si上自组织生长Ge量子点的特征进行了研究 ,发现生长温度对Ge量子点尺寸分布和密度的影响不同于分子束外延 (MBE)的结果 ,这种现象与VLP CVD表面控制反应模式有关。
5)APCVD常压化学气相沉积
1.Preparation of self-cleaning glass coated with TiO_2 on a float glass line by APCVD method在线常压化学气相沉积方法制备TiO_2自洁薄膜玻璃(英文)
2.TiN films were coated on glass substrates by atmospheric pressure chemical vapor deposition(APCVD) under different growth conditions,including different substrate temperatures and a gaseous mixture of varying chemical concentrations.本研究以TiCl4和NH3为反应气体,N2为保护气氛,用常压化学气相沉积法(APCVD)在玻璃基板上沉积制备得到了一系列不同反应温度和原料浓度的TiN薄膜。
3.N-doped TiO_2 films were grown by atmospheric pressure chemical vapor deposition(APCVD) with TiCl_4 and NH_3 as precursors.用常压化学气相沉积(APCVD)法,以四氯化钛(TiCl4)、氧气(O2)和氨气(NH3)作为气相反应先驱体,成功制备了掺氮二氧化钛(TiO2)薄膜。

英文短句/例句

1.A Study on Atmospheric Pressure Chemical Vapor Deposition of TiN Film and Its Kinetics;TiN薄膜常压化学气相沉积及动力学研究
2.A Ti_5Si_3 THIN FILM AND ITS COATING GLASS DEPOSITED BY ATMOSPHERIC PRESSURE CHEMICAL VAPOR DEPOSITION METHOD常压化学气相沉积法制备Ti_5Si_3薄膜及其镀膜玻璃
3.Preparation of TiO_2 Films by Atmospheric Pressure Chemical Vapor Deposition & Study of Doping Properties;常压化学气相沉积法二氧化钛薄膜的制备与掺杂性能研究
4.Preparation of self-cleaning glass coated with TiO_2 on a float glass line by APCVD method在线常压化学气相沉积方法制备TiO_2自洁薄膜玻璃(英文)
5.Preparation and Study of TiO_2 Films and Doped TiO_2 Films by Continuous-Fast Atmospheric Pressure Chemical Vapor Deposition;连续快速常压化学气相沉积法制备二氧化钛与掺杂二氧化钛薄膜及其性能的研究
6.The Study of the Deposition of SiO_2 Films with RF Cold Plasma at Atmospheric-pressure;常压射频低温等离子体增强化学气相沉积二氧化硅薄膜的研究
7.Study of Porous Nanocrystalline TiO_2 Thin Film Deposited by Atmospheric Pressure Plasma-enhanced Chemical Vapor Deposition;常压等离子化学气相沉积纳米晶TiO_2多孔薄膜的研究
8.Study of Porous Nanocrystalline TiO_2 Thin Film Deposited by Atmospheric Pressure Plasma-Enhanced Chemical Vapour Deposition常压等离子体增强化学气相沉积纳米晶TiO_2多孔薄膜的研究
9.thermally activated chemical vapour deposition热活化化学气相沉积
10.plasma activated chemical vapour deposition等离子体化学气相沉积
11.epitaxial CVD growth外延化学气相沉积生长
12.Atmospheric-pressure Plasma Chemical Vapor Deposition for Polycrystalline Silicon Preparation from SiCl_4 and OES Diagnosis由SiCl_4制备多晶硅的大气压等离子体化学气相沉积及发射光谱诊断
13.Fabrication of Silicon Inverse Opal Three-Dimensional Photonic Crystal Using Lpcvd/Template Techniques;低压化学气相沉积/模板技术制备硅反蛋白石三维光子晶体
14.The Study of Diamond Films and Its Composite Films Deposited by Bias Voltage HFCVD;偏压热丝化学气相沉积金刚石膜及其复合膜的研究
15.Synthesis of Carbon Nanotubes by Low Pressure Chemical Vapor Deposition and Their Applications碳纳米管的低压化学气相沉积法制备及其应用研究
16.Effect of Oxygen Partial Pressure on the Morphology of ZnO Nanostructure Prepared by Chemical Vapor Deposition氧分压对化学气相沉积法合成ZnO纳米结构形貌的影响
17.Fabrication of Germanium Inverse Opal Three-dimensional Photonic Crystal by LPCVD低压化学气相沉积技术制备锗反蛋白石三维光子晶体
18.Study of CVD Function coating on Molybdenum Substrate钼表面化学气相沉积功能涂层的研究

相关短句/例句

atmospheric pressure chemical vapor deposition (APCVD)常压化学气相淀积(APCVD)
3)LPCVD低压化学气相淀积
1.Research on Polysilicon Thin Film Technics by LPCVD;低压化学气相淀积多晶硅薄膜工艺研究
2.MOLECULAR DYNAMICS SIMULATION OF THE THICKNESS OF POLYCRYSTALLINE Si MEMBRANE PREPARED BY LPCVD;低压化学气相淀积多晶硅薄膜膜厚的分子动力学模拟
3.The internal stress in silicon-nitride thin films prepared by low-pressure chemical vapor deposition(LPCVD) was studied measured by XP-2 stylus profilometer.研究了低压化学气相淀积SiN(LPCVD)介质薄膜的内应力,采用XP-2型台阶仪测量了SiN介质薄膜的内应力,通过改变薄膜淀积时的工艺参数,观察了反应气体流量比、淀积温度、反应室压力等因素对SiN薄膜内应力的影响。
4)VLP-CVD超低压化学气相淀积
1.Temperature Dependence of Self organized Growth of Ge Quantum Dots on Si Substrate by VLP-CVD;对利用超低压化学气相淀积 (VLP CVD)技术在Si上自组织生长Ge量子点的特征进行了研究 ,发现生长温度对Ge量子点尺寸分布和密度的影响不同于分子束外延 (MBE)的结果 ,这种现象与VLP CVD表面控制反应模式有关。
5)APCVD常压化学气相沉积
1.Preparation of self-cleaning glass coated with TiO_2 on a float glass line by APCVD method在线常压化学气相沉积方法制备TiO_2自洁薄膜玻璃(英文)
2.TiN films were coated on glass substrates by atmospheric pressure chemical vapor deposition(APCVD) under different growth conditions,including different substrate temperatures and a gaseous mixture of varying chemical concentrations.本研究以TiCl4和NH3为反应气体,N2为保护气氛,用常压化学气相沉积法(APCVD)在玻璃基板上沉积制备得到了一系列不同反应温度和原料浓度的TiN薄膜。
3.N-doped TiO_2 films were grown by atmospheric pressure chemical vapor deposition(APCVD) with TiCl_4 and NH_3 as precursors.用常压化学气相沉积(APCVD)法,以四氯化钛(TiCl4)、氧气(O2)和氨气(NH3)作为气相反应先驱体,成功制备了掺氮二氧化钛(TiO2)薄膜。
6)atmospheric pressure chemical vapor deposition常压化学气相沉积
1.Titanium nitride(TiN)films were prepared by the atmospheric pressure chemical vapor deposition process using titanium tetrachloride and ammonia as reactive gases.以TiCl4和NH3为原料,用常压化学气相沉积法在玻璃基板表面沉积得到了TiN薄膜。
2.TiO_2/SnO_2:F composite films were deposited by atmospheric pressure chemical vapor deposition with Ti(OC_3H_7)_4 as pre- cursors and SnO_2:F coated glass as substrates.以Ti(OC_3H_7)_4为先驱体,SnO_2:F镀膜玻璃为基板,采用常压化学气相沉积法制备了TiO_2/SnO_2:F复合薄膜。