极紫外光刻,EUVL英语短句,例句大全

极紫外光刻,EUVL
1)EUVL极紫外光刻
1.Extreme ultraviolet lithography(EUVL) is one of all candidate next-generation lithography technologies targeting 45 nm features,the industrial throughput should be more than 80 wafers-per-hour.极紫外光刻(EUVL)技术是实现45 nm特征尺寸的候选技术之一,产业化设备要求300 mm硅片的产率大于每小时80片(80 wafer/h),此时入射到掩模版上的极紫外光功率密度很高,掩模版上的吸收层和Mo/Si多层膜将分别吸收100%和35%的入射光能量,从而导致其热变形,引起光刻性能下降,因此必须分析和控制掩模热变形。
2.The status of extreme ultraviolet lithography (EUVL),as the technology for nextgeneration lithography (NGL), in a rapidly developing stage is analyzed.分析了极紫外光刻技术作为下一代光刻技术的首选技术目前飞速发展阶段的状况,表明欧、美、日、俄等国家和地区在该领域集中了大量的人力、物力的目标是将光刻精度提高到50nm。
3.The typical NGL technologies, like immersion ArF lithography, extreme ultraviolet lithography (EUVL) and electron beam Projection lithography (EPL), are compared.通过比较几种具有较大潜力的NGL(浸没式ArF光刻机、极紫外光刻和电子束曝光 )的特点、开发现状和有待解决的关键技术 ,预言将来可能是以极紫外光刻、电子束曝光和某种常规光刻机结合的方式来实现工业、前沿科学技术需要的各种微米 /纳米级图形的制备。

英文短句/例句

1.Thermal Deformation of EUV Mask and its Influence on Lithographic Performance;极紫外光刻掩模热变形及其对光刻性能的影响
2.Research on Precise Mechanism and Related Control Technologies of Euvl Stage;极紫外光刻机工件台精密机械及控制相关技术
3.Investigation on Extreme Ultraviolet Lithography;极紫外投影光刻中若干关键技术研究
4.Two-mirror system design study of reduced projection optics for EUV Lithography;极紫外投影光刻两镜微缩投影系统的光学设计
5.Research of SU-8 Resist Lithography Using Ultraviolet Laser;紫外激光曝光光刻SU-8胶的工艺研究
6.Research of Focus Optical System Used in Ultraviolet Photolithography;用于紫外光刻的聚焦光学系统的研究
7.Study on Key Technologies in UV-LED Fiber Lithography System紫外LED光纤光刻系统关键技术研究
8.Development of a High ThermoStability UV Positive Photoresist and a 248nm Deep-UV Photoresist;耐高温紫外正型光刻胶和248nm深紫外光刻胶的研制
9.Research on Theory and Experiment of UV-Lithography on SU-8 Photoresist;SU-8胶紫外光刻理论与实验研究
10.Study of a UV Positive Photoresist and Photoacid Generators for 248nm Deep-UV Photoresist;紫外正型光刻胶及248nm产酸剂的研制
11.Optical head supporting sub wavelength structure with UV interference lithography支持亚波长结构光刻的紫外干涉光学头
12.Numerical analysis and measurement of stray light from UV ruled gratings紫外平面刻划光栅杂散光数值分析及测试
13.silicon photodiode vacuum ultraviolet detector硅光电二极管真空紫外探测器
14.The Optical Characteristic Studies of Space EUV Solar Telescope;空间极紫外太阳望远镜光学性能研究
15.Measure and Analysis of Discharge Produced Plasma EUV Spectrum放电等离子体极紫外光谱测量及分析
16.Ultraviolet light or the ultraviolet part of the spectrum.紫外光，紫外线的紫外光或光谱的紫外线部分
17.The Study of Novel Liquid Crystal Light Valve and Ultraviolet Photodiode Array;新颖液晶光阀及紫外光电二极管阵列的研究
18.Development of Ultraviolet Multi anode (128×128) Microchannel Arrays Photomultiplier Tube紫外多阳极(128×128)微通道阵列光电倍增管的研制

相关短句/例句

extreme ultra violet lithography极紫外光刻机
1.Vacuum stage is a key subsystem of extreme ultra violet lithography (EUVL) and its accuracy, velocity, acceleration, dynamic characters and synchronous scanning are decisive factors for image quality and throughput of the whole machine.作为极紫外光刻机的一个关键子系统,真空工件台的精度、速度、加速度、动态特性及同步性能对于光刻图形精度和光刻机的产率都起着重要作用。
3)EUVL极紫外投影光刻
1.To study the two-mirror reduced projection optics for Extreme Ultraviolet Lithography (EUVL), Schwarzschild design form and flat field design form were investigated.极紫外投影光刻(EUVL)两镜微缩投影物镜通常采用Schwarzschild结构和平场结构。
2.Some problems were brought from the short wavelength of EUVL.针对极紫外投影光刻 ( Extreme Ultraviolet Lithography,简称 EUVL)工作波长短的特点及由此带来的一些问题 ,对 EUVL微缩投影物镜的结构参数进行分析选择 ,设计了离轴照明方式的 Schwarzschild微缩投影成像物镜。
3.A laser-produced plasma(LPP) source with liquid aerosol spray target and nanosecond laser was developed,based on both soft X-ray radiation metrology and extreme ultraviolet projection lithography(EUVL).基于软X射线辐射计量和极紫外投影光刻(EUVL)应用,研制了一台使用纳秒激光器的液体微滴喷射靶激光等离子体(LPP)极紫外光源。
4)extreme-ultraviolet lithography极端紫外光刻
5)UV-lithography紫外光刻
1.CaF2 crystal with broad wavelength range and high transmittance has become the focus of the semiconductor industry with the development of UV-lithography.随着深紫外光刻技术的发展,透光范围宽、透过率高的CaF_2晶体成了人们关注的焦点,其尺寸和质量得到了不断的提高。
2.A UV-exposure model and a dimensional tolerance model based on Fresnel diffraction theory are established by considering the impact of the refractive index and absorption coefficient of SU-8 photoresist on dimensional precision of UV-lithography.在考虑了SU-8的吸收系数和折射系数对紫外光刻尺寸精度影响的基础上,根据菲涅耳衍射理论建立了紫外曝光改进模型和尺寸公差模型,对SU-8微结构的尺寸及其公差进行数值模拟。
3.The deep UV-lithography is one of the main processing technique of high aspect ratio microstructure fabrication.UV-LIGA技术是制作大高宽比微电子机械(MEMS)的方法之一,而UV-LIGA技术的关键工艺之一为深度紫外光刻。
6)UV lithography紫外光刻
1.The pattern transfer accuracy of deep UV lithography is investigated.由于紫外光衍射效应比较大 ,通过紫外光刻获得高精度的大高度微结构并不容易。
2.To study the relationship between the shape errors of photo-resist model based on UV lithography and processing parameters,the orthogonal experimentation was employed to design and organize the experiment for positive photo-resist AZ9260.为研究基于紫外光刻加工技术的光刻胶模型形状误差与工艺参数的关系,利用正交实验法对正性光刻胶AZ9260进行了实验研究。