反铁电,antiferroelectric
1)antiferroelectric反铁电
1.Electric field-induced antiferroelectric-ferroelectric phase transitioh of PZST ceramics was studied.研究了PZST陶瓷电场诱导反铁电-铁电相变,当外加电场大于相变临界参数EAFE-FE时,样品由反铁电态诱导为铁电态,并在宏观性能上产生突变:极化强度和纵向应变分别由零跃变到大约30μC/cm2和0。
2.The results show that ferroelectric-antiferroelectric and antiferroelectric-paraelectric phase transition with relaxor characteristic occur from room temperature to 500℃, leading to the two peaks of electric permittivity to temperature.5TiO3陶瓷的介电和压电性能,发现陶瓷从室温到500℃温度范围的介电谱中存在两个介电峰,电滞回线显示第一个介电峰由铁电-反铁电相变引起的,温度继续升高,反铁电相由宏畴变为微畴,微畴向顺电相转变导致了第二个介电峰,该峰对应的相变为弥散型相变。
3.It was reported that Zr riched perovskite antiferroelectric PbZr_xTi_(1-x)O_3(PZT) have perfect energy storage properties,which can be improved by doping.据文献报道,富Zr钙钛矿反铁电体PZT具有储能特性,对其进行掺杂改性可望使其得到优化,La掺杂的PbZrO_3具有高达14。
英文短句/例句

1.Double hysterisis, found in antiferromagnetics and antiferroelectrics, has an equal significance as the single hysteresis.双回线出现在反铁电()中及部分铁电体的临界点。
2.The symmetry and order parameter of antiferroelectric K_3H(SeO_4)_2反铁电晶体K_3H(SeO_4)_2对称性和序参量
3.The Free Energy of the Ferroelectric Phase Transition and the Order Parameter of the Antiferroelectric Phase Transition;铁电相变自由能的系列研究与反铁电相变序参量选取
4.Study on Antiferroelectric Behavior of Ferroelectric Thin Film Artificially Modulated by Ion Implantation;离子注入下铁电薄膜的反铁电现象及其机理研究
5.Study on Chemical Synthesis of Antiferroelectric PLZST with Complex Perovskite Structure;PLZST复合钙钛矿结构弛豫反铁电材料的化学合成
6.Effect of DC bias on pressure-induced depolarization of Pb(Nb,Zr,Sn,Ti)O_3 ceramics直流偏压对压力诱导反铁电陶瓷去极化性能的影响
7.Investigation on the Magnetic Structure and Magneto-electric Properties of the Triangular Antiferromagnet AgCrO_2三角反铁磁AgCrO_2磁结构和磁电性质研究
8.The electron acceptor used was a ferric salt that was reduced to the ferrous form during the reaction.所用的电子受体是一种高铁盐,在反应时它还原成亚铁。
9.Micromechanics Analysis of Critical Condition of Ferroelectric Polarization Reversal铁电体极化反转临界条件的细观力学分析
10.THE STUDY OF THE ANOMALOUS c-AXIS RESISTIVITY IN HOLE-DOPED BILAYER TRIANGULAR ANTIFERROMAGNETS双层三角晶格反铁磁材料c-轴电阻性质的研究
11.Protective Al_2O_3 Coating on Antiferromagnetic Fe32Mn3Al8Cr Precise Resistance AlloyFe32Mn3Al8Cr反铁磁精密电阻合金Al_2O_3防护涂层的研究
12.OPTICAL METHOD FOR STUDYING ELECTROCHEMICAL REACTION; OXIDATION AND REDUCTION OF SURFACE FILMS ON IRON光学方法对电化学反应的研究:铁表面膜的氧化还原反应
13.The tunneling current is obstructed when the two ferromagnetic layers have opposite orientations and is allowed when their orientations are the same.若两侧的铁磁层磁性方向相反,穿隧电流就被挡住,反之则可通过。
14.EIS Study for the Reaction Mechanism of Fe-Based Hydrogen Evolution铁基上析氢反应机理电化学阻抗谱等效电路模型
15.A ferroelectric substance.铁电体一种铁电物质
16.Adsorption and Reaction of Iron Protoporphyrin IX on Electrode Surfaces with in Situ Vibrational Spectroscopies;铁原卟啉在电极表面吸附与反应的现场振动光谱法研究
17.Study on Mechanism and Influencing Factors of the Degradation of Recalcitrant Organic Compounds by Metallic Iron and Electrolytic Reduction;金属铁与电解法还原难降解有机物反应机理和影响因素的研究
18.Isolation and Identification of an Autotrophic Denitrifying Strain with Iron Powder as Electron Donor;一株以单质铁作为电子供体的反硝化细菌的分离和鉴定
相关短句/例句

antiferroelectric phase反铁电相
1.In the paraelectric-antiferroelectric phase transition of antiferroelectrics NH_4H_2PO_4, the symmetry of crystalloid changes.在反铁电晶体NH4H2PO4(ADP)顺电反铁电相变中,对称性所属点群也随之发生相应的改变。
2.The symmetry of the antiferroelectric phase of PbZrO3 was reinvestigated by the symmetry element analysis based on the projective figures given in the related literatures.在参考文献给出的锆酸铅的反铁电相投影图的基础上,从生群元的角度重新研究了反铁电体锆酸铅的反铁电相的对称性,发现锆酸铅反铁电相的对称群应是P2/m,属于单斜晶系。
3.For the paraelectric-antiferroelectric phase transition at 180K,this paper draw the conclusion that the symmetry of antiferroelectric Cs3H(SeO_4)_2 is P_2(C_2).在反铁电晶体 Cs_3H(SeO_4)_2顺电-反铁电相变中,对称性所属点群也随之发生相应的改变。
3)antiferroelectrics反铁电体
4)antiferroelectricity[英]['?nti'fer?uilek'trisiti][美]['?nt?'f?ro?,l?k'tr?s?t?]反铁电性
5)antiferroelectric反铁电体
1.This papor intreduced the characteristics of antiferroelectric and its application in energy stor- age capacitors.本文介绍了反铁电体材料的特性及其在储能电容器方面的应用。
6)antiferroelectric反铁电的
延伸阅读

反铁电陶瓷分子式:CAS号:性质:主晶相为反铁电体的陶瓷材料,常见的反铁电体为锆酸铅(PbZrO3)或以其为基的固溶体。具有高的相变场强、储能密度和较低的介电常数,低的介质损耗。如Pb0.97La0.02[(Zr59Till)0.7Sn0.3]O3反铁电陶瓷相变场强为34kV/cm(25℃),介电常数峰值2020,居里温度181℃。采用一般电子陶瓷工艺制造。由于其中含铅量较高,常用刚玉坩埚加盖密封烧成,以防止氧化铅高温挥发,烧成温度:1340℃左右。用这类材料制成的抗辐射储能电容器的储能密度可达0.3J/cm3以上,制作时常在瓷片电极附近的绝缘边上涂敷半导釉,可有效地防止绝缘边击穿,提高工作电压。还可用于制作高压电容器、高介电容器,以及换能器(实现电能与机械能转换)等。